Achievement of balanced high frequency and high breakdown by InGaAs-based high-electron-mobility transistors with slant field plates

2016 ◽  
Vol 9 (11) ◽  
pp. 114101 ◽  
Author(s):  
Tomotaka Hosotani ◽  
Taiichi Otsuji ◽  
Tetsuya Suemitsu
Keyword(s):  
Electron Mobility ◽  
High Frequency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 7
Author(s):  
Yu-Shyan Lin ◽  
Shin-Fu Lin
Keyword(s):  
Electron Mobility ◽  
High Frequency ◽  
Noise Figure ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Large Signal ◽  
High Electron Mobility ◽  
High Frequency Noise ◽  
Electron Mobility Transistors

This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO2 passivation layer to undoped AlGaN/GaN HEMT’s increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure (NFmin) of the HEMT with TiO2 passivation is significantly reduced.

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