Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Takahiro Kamei; Yongxun Liu; Kazuhiko Endo; Shinichi O'uchi; Junichi Tsukada; Hiromi Yamauchi; Yuki Ishikawa; Tetsuro Hayashida; Takashi Matsukawa; Kunihiro Sakamoto; Atsushi Ogura; Meishoku Masahara

doi:10.7567/jjap.50.04dc14

Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC14 ◽

Cited By ~ 3

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

20 Nm

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Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC14 ◽

Cited By ~ 10

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

20 Nm

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Analytical solution of fundamental surface potential equations for symmetric double-gate metal-oxide-semiconductor field-effect transistors

International Journal of Electronics ◽

10.1080/00207210902977822 ◽

2009 ◽

Vol 96 (10) ◽

pp. 1023-1038

Author(s):

Sheng Chang ◽

Gaofeng Wang ◽

Qijun Huang ◽

Hao Wang

Keyword(s):

Analytical Solution ◽

Metal Oxide ◽

Surface Potential ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate

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Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.99 ◽

2008 ◽

Vol 47 (1) ◽

pp. 99-103 ◽

Cited By ~ 18

Author(s):

Yoshifumi Nishi ◽

Atsuhiro Kinoshita ◽

Daisuke Hagishima ◽

Junji Koga

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Consideration of Performance Limitation of Sub-100-nm Double-Gate Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l1096 ◽

2002 ◽

Vol 41 (Part 2, No. 10A) ◽

pp. L1096-L1098 ◽

Cited By ~ 2

Author(s):

Shin-ichiro Yanagi ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Performance Limitation

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Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3084 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3084-3087 ◽

Cited By ~ 18

Author(s):

Yongxun Liu ◽

Etsuro Sugimata ◽

Kenichi Ishii ◽

Meishoku Masahara ◽

Kazuhiko Endo ◽

...

Keyword(s):

Experimental Study ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Wet Etching ◽

Oxide Semiconductor ◽

Double Gate ◽

Channel Surface ◽

Effective Carrier

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Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4885765 ◽

2014 ◽

Vol 104 (26) ◽

pp. 263507 ◽

Cited By ~ 7

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Ryosho Nakane ◽

Osamu Ichikawa ◽

Takenori Osada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Vertical Scaling

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Cited By ~ 14

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

Double Gate

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Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Applied Physics Letters ◽

10.1063/1.1812571 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4139-4141 ◽

Cited By ~ 15

Author(s):

Meishoku Masahara ◽

Shinichi Hosokawa ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Yuuichi Naitou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Nonlinear Dielectric ◽

Dopant Profiling

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Simulation of High–κ Dielectrics in Counter Doped Double Gate Metal Oxide Semiconductor Field Effect Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2010.1061 ◽

2010 ◽

Vol 5 (1) ◽

pp. 43-49

Author(s):

T. George James ◽

Saji Joseph ◽

Vincent Mathew

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate

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Structural Dependence of Source-and-Drain Series Resistance on Saturation Drain Current for Sub-20 nm Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.071302 ◽

2013 ◽

Vol 52 (7R) ◽

pp. 071302

Author(s):

JongChul Yoon ◽

Akira Hiroki ◽

Kazutoshi Kobayashi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Series Resistance ◽

Field Effect Transistors ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural Dependence ◽

20 Nm

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