Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.99 ◽

2008 ◽

Vol 47 (1) ◽

pp. 99-103 ◽

Author(s):

Yoshifumi Nishi ◽

Atsuhiro Kinoshita ◽

Daisuke Hagishima ◽

Junji Koga

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Applied Physics Express ◽

10.7567/1882-0786/ab1b53 ◽

2019 ◽

Vol 12 (6) ◽

pp. 061003 ◽

Author(s):

Kidist Moges ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ultrahigh Temperature

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Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4885765 ◽

2014 ◽

Vol 104 (26) ◽

pp. 263507 ◽

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Ryosho Nakane ◽

Osamu Ichikawa ◽

Takenori Osada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Vertical Scaling

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Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC14 ◽

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

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Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2807832 ◽

2007 ◽

Vol 91 (20) ◽

pp. 203506 ◽

Author(s):

Shigeki Kobayashi ◽

Masumi Saitoh ◽

Yukio Nakabayashi ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Limited Mobility ◽

Stress Effects ◽

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Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2013.2265435 ◽

2013 ◽

Vol 12 (4) ◽

pp. 621-628 ◽

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sung-Hoon Lee ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Performance Improvement of Partially Silicon-on-Insulator Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors Using Doping-Engineered Drift Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.101201 ◽

2012 ◽

Vol 51 ◽

pp. 101201

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha ◽

Saeed Mohammadi

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

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Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.094101 ◽

2011 ◽

Vol 50 (9R) ◽

pp. 094101 ◽

Author(s):

Naotoshi Kadotani ◽

Teruyuki Ohashi ◽

Tsunaki Takahashi ◽

Shunri Oda ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Accumulation Mode

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Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2785957 ◽

2007 ◽

Vol 102 (7) ◽

pp. 074510 ◽

Author(s):

Ken Uchida ◽

Junji Koga ◽

Shin-ichi Takagi

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC14 ◽

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

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Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.094101 ◽

2011 ◽

Vol 50 (9) ◽

pp. 094101 ◽

Author(s):

Naotoshi Kadotani ◽

Teruyuki Ohashi ◽

Tsunaki Takahashi ◽

Shunri Oda ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Accumulation Mode

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