Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate

2011 ◽  
Vol 50 (9R) ◽  
pp. 096503 ◽  
Author(s):  
Chin-Te Wang ◽  
Chien-I Kuo ◽  
Heng-Tung Hsu ◽  
Edward Yi Chang ◽  
Li-Han Hsu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Flip Chip ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Organic Substrate ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Flip Chip Packaging

scholarly journals Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz

ETRI Journal ◽  
1996 ◽  
Vol 18 (3) ◽  
pp. 171-179 ◽  
Author(s):  
Jin-Hee Lee Lee ◽  
Hyung-Sup Yoon Yoon ◽  
Byung-Sun Park Park ◽  
Chul Soon Park Park ◽  
Sang-Soo Choi Choi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Millimeter-wave low-noise high electron mobility transistors

1985 ◽  
Vol 6 (10) ◽  
pp. 531-533 ◽  
Author(s):  
P.C. Chao ◽  
S.C. Palmateer ◽  
P.M. Smith ◽  
U.K. Mishra ◽  
K.H.G. Duh ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085004 ◽  
Author(s):  
Isabel Harrysson Rodrigues ◽  
David Niepce ◽  
Arsalan Pourkabirian ◽  
Giuseppe Moschetti ◽  
Joel Schleeh ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Angular Dependence ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Ultra-low-noise cryogenic high-electron-mobility transistors

1988 ◽  
Vol 35 (3) ◽  
pp. 249-256 ◽  
Author(s):  
K.H.G. Duh ◽  
M.W. Pospieszalski ◽  
W.F. Kopp ◽  
P. Ho ◽  
A.A. Jabra ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Ultra Low Noise

scholarly journals High Electron Mobility Transistors Using AlGaN Materials

2019 ◽  
Author(s):  
Xiejia
Keyword(s):  
Electron Mobility ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
High Electron Mobility ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications

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