High Electron Mobility Transistors Using AlGaN Materials

High electron mobility AlGaN/GaN have been successfully grown on low cost and high challenges AlN/Si substrates. By inserting a thin SiN layer between GaN and AlN to improve the quality of GaN, the result showed that the thin SiN layer could greatly increase the mobility of the two-dimensional electron gas formed at the interface of AlGaN and GaN layers. This suggests that it is possible to grow high-quality GaN on silicon as well as on sapphire for many applications