Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cf08 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CF08 ◽

Author(s):

Takashi Katsuno ◽

Masakazu Kanechika ◽

Kenji Itoh ◽

Koichi Nishikawa ◽

Tsutomu Uesugi ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Passivation Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation

Solid-State Electronics ◽

10.1016/j.sse.2013.09.001 ◽

2013 ◽

Vol 89 ◽

pp. 207-211 ◽

Author(s):

A. Alexewicz ◽

M. Alomari ◽

D. Maier ◽

H. Behmenburg ◽

C. Giesen ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Thermally Stable ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

IEEE Electron Device Letters ◽

10.1109/led.2015.2445495 ◽

2015 ◽

Vol 36 (8) ◽

pp. 757-759 ◽

Author(s):

Shuxun Lin ◽

Maojun Wang ◽

Bing Xie ◽

Cheng P. Wen ◽

Min Yu ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Ozone Oxidation ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse ◽

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors

Nano-Semiconductors ◽

10.1201/9781315217468-22 ◽

2018 ◽

pp. 429-474

Keyword(s):

Metal Oxide ◽

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.061001 ◽

2011 ◽

Vol 50 (6) ◽

pp. 061001 ◽

Author(s):

Masafumi Tajima ◽

Tamotsu Hashizume

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Bias Stress ◽

Electron Mobility Transistors ◽

Current Collapse

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Current collapse suppression by SiO2 passivation in p-GaN/AlGaN/GaN enhancement-mode high electron mobility transistors

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528613 ◽

2016 ◽

Author(s):

Shin-Yi Ho ◽

Chih-Hao Wang ◽

JianJang Huang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Current Collapse

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Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaN∕GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.2928236 ◽

2008 ◽

Vol 92 (19) ◽

pp. 193505 ◽

Author(s):

David J. Meyer ◽

Joseph R. Flemish ◽

Joan M. Redwing

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

Treatment Effects ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

Solid-State Electronics ◽

10.1016/j.sse.2010.05.002 ◽

2010 ◽

Vol 54 (11) ◽

pp. 1430-1433 ◽

Author(s):

S. Arulkumaran ◽

G.I. Ng ◽

C.H. Lee ◽

Z.H. Liu ◽

K. Radhakrishnan ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Rf Plasma ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

10.7567/ssdm.2011.a-1-4 ◽

2011 ◽

Author(s):

A. Imai ◽

K. Yamanaka ◽

Y. Suzuki ◽

T. Nanjo ◽

M. Suita ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse ◽

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Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Electronics Letters ◽

10.1049/el:20010434 ◽

2001 ◽

Vol 37 (10) ◽

pp. 661 ◽

Author(s):

P.B. Klein ◽

S.C. Binari ◽

K. Ikossi-Anastasiou ◽

A.E. Wickenden ◽

D.D. Koleske ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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