High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature

2013 ◽  
Vol 52 (6R) ◽  
pp. 060204 ◽  
Author(s):  
Kookhyun Choi ◽  
Minseok Kim ◽  
Seongpil Chang ◽  
Tae-Yeon Oh ◽  
Shin Woo Jeong ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Solution Process ◽  
Oxide Thin Film ◽  
Indium Oxide Thin Film

Low-temperature fabrication of high performance indium oxide thin film transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (47) ◽  
pp. 37807-37813 ◽  
Author(s):  
You Meng ◽  
Guoxia Liu ◽  
Ao Liu ◽  
Huijun Song ◽  
Yang Hou ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Solution Process ◽  
Oxide Thin Film ◽  
Indium Oxide Thin Film

In this study, indium oxide (In2O3) thin-film transistors (TFTs) were fabricated by a fully-solution process at low temperature.

Facile patterning of amorphous indium oxide thin films based on a gel-like aqueous precursor for low-temperature, high performance thin-film transistors

2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Indium Oxide Thin Film

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.

Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor

2015 ◽  
Vol 3 (4) ◽  
pp. 854-860 ◽  
Author(s):  
Chang-Ho Choi ◽  
Seung-Yeol Han ◽  
Yu-Wei Su ◽  
Zhen Fang ◽  
Liang-Yu Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Annealing Temperatures ◽  
Nitrate Precursor ◽  
Temperature Solution ◽  
Indium Oxide Thin Film

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.

High Performance Solution-Processed Indium Oxide Thin-Film Transistors

2008 ◽  
Vol 130 (38) ◽  
pp. 12580-12581 ◽  
Author(s):  
Hyun Sung Kim ◽  
Paul D. Byrne ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Indium Oxide Thin Film
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