Zinc-blende and wurtzite phase separation in catalyst-free molecular beam epitaxy vapor–liquid–solid-grown Si-doped GaAs nanowires on a Si(111) substrate induced by Si doping

Undoped InAs and Si-doped InAs nanowires with stacking faults and twins were synthesized by catalyst-free molecular beam epitaxy and their thermoelectric enhancements due to planar defects were experimentally and theoretically demonstrated.

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Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy

Nanotechnology ◽

10.1088/1361-6528/abda75 ◽

2021 ◽

Vol 32 (15) ◽

pp. 155602

Author(s):

T Dursap ◽

M Vettori ◽

C Botella ◽

P Regreny ◽

N Blanchard ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Phase Control ◽

Wurtzite Phase ◽

Gaas Nanowires

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Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

Physical Review B ◽

10.1103/physrevb.77.155326 ◽

2008 ◽

Vol 77 (15) ◽

Cited By ~ 324

Author(s):

C. Colombo ◽

D. Spirkoska ◽

M. Frimmer ◽

G. Abstreiter ◽

A. Fontcuberta i Morral

Keyword(s):

Molecular Beam Epitaxy ◽

Growth Mechanism ◽

Molecular Beam ◽

Catalyst Free ◽

Gaas Nanowires ◽

Free Growth

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Growth by molecular beam epitaxy and electrical characterization of Si‐doped zinc blende GaN films deposited on β‐SiC coated (001) Si substrates

Applied Physics Letters ◽

10.1063/1.113085 ◽

1994 ◽

Vol 65 (1) ◽

pp. 91-93 ◽

Cited By ~ 74

Author(s):

J. G. Kim ◽

A. C. Frenkel ◽

H. Liu ◽

R. M. Park

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Electrical Characterization ◽

Si Substrates ◽

Zinc Blende ◽

Si Doped

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Optical properties of undoped, Be-doped, and Si-doped wurtzite-rich GaAs nanowires grown on Si substrates by molecular beam epitaxy

Solid State Communications ◽

10.1016/j.ssc.2010.01.037 ◽

2010 ◽

Vol 150 (15-16) ◽

pp. 729-733 ◽

Cited By ~ 25

Author(s):

Soo-Ghang Ihn ◽

Mee-Yi Ryu ◽

Jong-In Song

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Si Substrates ◽

Gaas Nanowires ◽

Si Doped

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Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires

Nanomaterials ◽

10.3390/nano10050833 ◽

2020 ◽

Vol 10 (5) ◽

pp. 833 ◽

Cited By ~ 3

Author(s):

Vladimir G. Dubrovskii ◽

Hadi Hijazi

Keyword(s):

Growth Cycle ◽

Hydride Vapor Phase Epitaxy ◽

Island Growth ◽

Vapor Liquid Solid ◽

Catalyst Droplet ◽

Si Doping ◽

Time Scale Separation ◽

Gaas Nanowires ◽

Si Doped ◽

Vapor Liquid

III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle. We investigate theoretically how this effect influences the electron-to-hole ratio in Si-doped GaAs nanowires. Several factors influencing the As depletion in the vapor–liquid–solid nanowire growth are considered, including the time-scale separation between the steps of island growth and refill, the “stopping effect” at very low As concentrations, and the maximum As concentration at nucleation and desorption. It is shown that the As depletion effect is stronger for slower nanowire elongation rates and faster for island growth relative to refill. Larger concentration oscillations suppress the electron-to-hole ratio and substantially enhance the tendency for the p-type Si doping of GaAs nanowires, which is a typical picture in molecular beam epitaxy. The oscillations become weaker and may finally disappear in vapor deposition techniques such as hydride vapor phase epitaxy, where the n-type Si doping of GaAs nanowires is more easily achievable.

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