Effect of Silicon Doping on the Photoluminescence and Photoreflectance Spectra of Catalyst-Free Molecular Beam Epitaxy–Vapor Liquid Solid Grown GaAs Nanowires on (111)Si Substrate

2011 ◽  
Vol 50 (6) ◽  
pp. 06GH08 ◽  
Author(s):  
Akio Suzuki ◽  
Takayuki Mori ◽  
Atsuhiko Fukuyama ◽  
Tetsuo Ikari ◽  
Ji-Hyun Paek ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Doping ◽  
Si Substrate ◽  
Vapor Liquid Solid ◽  
Catalyst Free ◽  
Gaas Nanowires ◽  
Vapor Liquid

Optical properties of Be-doped GaAs nanowires on Si substrate grown by a catalyst-free molecular beam epitaxy vapor–liquid–solid method

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FV03
Author(s):  
Akio Suzuki ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki ◽  
Kentaro Sakai ◽  
Ji-Hyun Paek ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrate ◽  
Vapor Liquid Solid ◽  
Catalyst Free ◽  
Gaas Nanowires ◽  
Vapor Liquid

Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Scanning Electron Microscope ◽  
Structural Properties ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Gaas Nanowires ◽  
Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

2008 ◽  
Vol 77 (15) ◽  
Author(s):  
C. Colombo ◽  
D. Spirkoska ◽  
M. Frimmer ◽  
G. Abstreiter ◽  
A. Fontcuberta i Morral
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Catalyst Free ◽  
Gaas Nanowires ◽  
Free Growth

Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy

2020 ◽  
Vol 116 (5) ◽  
pp. 052101
Author(s):  
Daniel Ruhstorfer ◽  
Simon Mejia ◽  
Manfred Ramsteiner ◽  
Markus Döblinger ◽  
Hubert Riedl ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free ◽  
Gaas Nanowires ◽  
Si Doped
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