Fabrication of top-contact pentacene-based organic thin-film transistors with short channels using two-step SU8/poly(vinyl alcohol) lift-off photolithography process

2016 ◽  
Vol 55 (2) ◽  
pp. 026502 ◽  
Author(s):  
Ching-Lin Fan ◽  
Wei-Chun Lin ◽  
Cheng-Chieh Lee ◽  
Yu-Zuo Lin ◽  
Bohr-Ran Huang
2019 ◽  
Vol 7 (16) ◽  
pp. 4879-4886 ◽  
Author(s):  
Jupeng Cao ◽  
Xiaoyun Wei ◽  
Yuxuan Che ◽  
Aiyuan Li ◽  
Yaowu He ◽  
...  

The strategy of composite polymer dielectrics for low consumption-high efficiency organic thin film transistors via the solution method.


2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.


Author(s):  
Kuo-Tong Lin ◽  
Chia-Hsun Chen ◽  
Ming-Huan Yang ◽  
Yuh-Zheng Lee ◽  
Kevin Cheng

2020 ◽  
Vol 4 (10) ◽  
pp. 2990-2994
Author(s):  
Deyang Ji ◽  
Jie Li ◽  
Xiaosong Chen ◽  
Lin Li ◽  
Liqiang Li ◽  
...  

Polystyrene-based masks are fabricated to produce top-contact high-resolution (5 μm) electrodes. With this mask, the mobility of DPA-based thin-film transistors could reach 19.22 cm2 V−1 s−1, which is a new breakthrough for DPA thin-film transistors.


Materials ◽  
2016 ◽  
Vol 9 (1) ◽  
pp. 46 ◽  
Author(s):  
Ching-Lin Fan ◽  
Wei-Chun Lin ◽  
Hsiang-Sheng Chang ◽  
Yu-Zuo Lin ◽  
Bohr-Ran Huang

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