Mechanism of high-fluence proton induced electrical degradation in AlGaN/GaN high-electron-mobility transistors

2018 ◽  
Vol 57 (7) ◽  
pp. 074101 ◽  
Author(s):  
Zhifeng Lei ◽  
Hongxia Guo ◽  
Minghua Tang ◽  
Chao Peng ◽  
Zhangang Zhang ◽  
...  
2020 ◽  
Vol 67 (7) ◽  
pp. 1339-1344
Author(s):  
Shaozhong Yue ◽  
Zhifeng Lei ◽  
Chao Peng ◽  
Xiangli Zhong ◽  
Jinbin Wang ◽  
...  

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