Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

2018 ◽  
Vol 57 (10) ◽  
pp. 105501 ◽  
Author(s):  
Kentaro Nagamatsu ◽  
Yuto Ando ◽  
Zheng Ye ◽  
Ousmane Barry ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Vapor Phase ◽  
High Purity ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Schottky Barrier Diodes

Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement

2011 ◽  
Vol 50 (1R) ◽  
pp. 011201 ◽  
Author(s):  
Osamu Ichikawa ◽  
Noboru Fukuhara ◽  
Masahiko Hata ◽  
Takayuki Nakano ◽  
Masakazu Sugiyama ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Vapor Phase ◽  
Schottky Barrier Height ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Height Measurement

Photoluminescence Due to Lattice-Mismatch Defects in High-Purity ZnSe Layers Grown by Metalorganic Vapor Phase Epitaxy

1988 ◽  
Vol 27 (Part 2, No. 3) ◽  
pp. L441-L443 ◽  
Author(s):  
Noriyoshi Shibata ◽  
Akira Ohki ◽  
Sakae Zembutsu ◽  
Akinori Katsui
Keyword(s):  
Vapor Phase ◽  
High Purity ◽  
Lattice Mismatch ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

2015 ◽  
Vol 8 (6) ◽  
pp. 061003 ◽  
Author(s):  
Toru Kinoshita ◽  
Toru Nagashima ◽  
Toshiyuki Obata ◽  
Shinya Takashima ◽  
Reo Yamamoto ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Schottky Barrier Diodes

Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors

1987 ◽  
Vol 62 (2) ◽  
pp. 632-643 ◽  
Author(s):  
T. F. Kuech ◽  
D. J. Wolford ◽  
E. Veuhoff ◽  
V. Deline ◽  
P. M. Mooney ◽  
...  
Keyword(s):  
Vapor Phase ◽  
High Purity ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

2021 ◽  
Vol 118 (17) ◽  
pp. 172106
Author(s):  
Sayleap Sdoeung ◽  
Kohei Sasaki ◽  
Satoshi Masuya ◽  
Katsumi Kawasaki ◽  
Jun Hirabayashi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Vapor Phase ◽  
Stacking Faults ◽  
Schottky Barrier Diodes
Sign in / Sign up

Export Citation Format

Share Document