Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

2010 ◽  
Vol 3 (10) ◽  
pp. 101003 ◽  
Author(s):  
Jun Suda ◽  
Kazuki Yamaji ◽  
Yuichirou Hayashi ◽  
Tsunenobu Kimoto ◽  
Kenji Shimoyama ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Schottky Barrier Diodes ◽  
Free Standing ◽  
Current Voltage ◽  
Current Voltage Characteristics

Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy

2015 ◽  
Vol 8 (6) ◽  
pp. 061003 ◽  
Author(s):  
Toru Kinoshita ◽  
Toru Nagashima ◽  
Toshiyuki Obata ◽  
Shinya Takashima ◽  
Reo Yamamoto ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Schottky Barrier Diodes

Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

CrystEngComm ◽  
2016 ◽  
Vol 18 (40) ◽  
pp. 7690-7695
Author(s):  
Seohwi Woo ◽  
Sangil Lee ◽  
Uiho Choi ◽  
Hyunjae Lee ◽  
Minho Kim ◽  
...  
Keyword(s):  
Chemical Reaction ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

A 2 in.-diameter free-standing m-plane GaN wafer was fabricated through in situ self-separation from m-plane sapphire using HCl chemical reaction etching (HCRE) in hydride vapor-phase epitaxy (HVPE).

Current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky barrier diodes

1992 ◽  
Vol 28 (3) ◽  
pp. 296 ◽  
Author(s):  
R.S. Spraggs ◽  
G. Pananakakis ◽  
D. Bauza ◽  
K.J. Reeson ◽  
B.J. Sealy
Keyword(s):  
Schottky Barrier ◽  
Ion Beam ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

1999 ◽  
Vol 38 (Part 2, No. 3A) ◽  
pp. L217-L219 ◽  
Author(s):  
Michael K. Kelly ◽  
Robert P. Vaudo ◽  
Vivek M. Phanse ◽  
Lutz Görgens ◽  
Oliver Ambacher ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

2007 ◽  
Vol 253 (18) ◽  
pp. 7423-7428 ◽  
Author(s):  
T.B. Wei ◽  
R.F. Duan ◽  
J.X. Wang ◽  
J.M. Li ◽  
Z.Q. Huo ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing
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