Impurity Doping into Single and Poly Crystalline Silicon by a Large Area Ion Doping Technique

a-Si TFT Technologies for AM-LCDS

MRS Proceedings ◽

10.1557/proc-345-3 ◽

1994 ◽

Vol 345 ◽

Cited By ~ 7

Author(s):

Nobuki Ibaraki

Keyword(s):

Implantation Technique ◽

Picture Quality ◽

Large Area ◽

Aperture Ratio ◽

Large Size ◽

Ion Doping ◽

Doping Technique ◽

Future Technologies ◽

Improved Characteristics

AbstractA technical trend for a-Si TFTs is their application to large-size, high-pixel density AMLCDs such as XGA, EWS, and HDTV. In order to realize these LCDs, the TFT device characteristics must be improved. Future technologies, which will be necessary to fabricate TFTs with improved characteristics are as follows,(1) Fully self-aligned TFT technology: A SA-TFT structure reduces the feedthrough voltage caused by parasitic capacitance due to gate/source overlap. This results in an improved picture quality and a higher aperture ratio. Fabrication of such a structure would require ion doping technology.(2) Ion doping technology: This non-mass-separated implantation technique has large area doping capability and much higher doping speed compared to conventional ion implantation technique. The major problems with the ion doping technique is the implantation of unwanted species which deteriorate the quality of source/drain and channel regions of TFTs.

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Application of a large area ion doping technique to a-Si:H TFT for LCD

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(93)95071-c ◽

1993 ◽

Vol 74 (1-2) ◽

pp. 331-335 ◽

Cited By ~ 3

Author(s):

Akihisa Yoshida ◽

Masatoshi Kitagawa ◽

Takashi Hirao

Keyword(s):

Large Area ◽

Ion Doping ◽

Doping Technique

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Application of a large area ion doping technique to a-Si:H TFT for LCD

Ion Implantation Technology–92 ◽

10.1016/b978-0-444-89994-1.50072-7 ◽

1993 ◽

pp. 331-335

Author(s):

Akihisa Yoshida ◽

Masatoshi Kitagawa ◽

Takashi Hirao

Keyword(s):

Large Area ◽

Ion Doping ◽

Doping Technique

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Application of Large Area Ion-Doping Technique to AM-LCD

Laser and Ion Beam Modification of Materials ◽

10.1016/b978-0-444-81994-9.50078-6 ◽

1994 ◽

pp. 367-372

Author(s):

Takashi Hirao ◽

Akihisa Yoshida ◽

Masatoshi Kitagawa

Keyword(s):

Large Area ◽

Ion Doping ◽

Doping Technique

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Large‐Area Ion Doping Technique with Bucket‐Type Ion Source for Polycrystalline Silicon Films

Journal of The Electrochemical Society ◽

10.1149/1.2086261 ◽

1990 ◽

Vol 137 (11) ◽

pp. 3522-3526 ◽

Cited By ~ 9

Author(s):

G. Kawachi ◽

T. Aoyama ◽

K. Miyata ◽

Y. Ohno ◽

A. Mimura ◽

...

Keyword(s):

Polycrystalline Silicon ◽

Ion Source ◽

Silicon Films ◽

Large Area ◽

Ion Doping ◽

Doping Technique ◽

Polycrystalline Silicon Films

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Fabrication of a-Si:H TFT's by a Large Area Ion Doping Technique

10.7567/ssdm.1990.ln-se-3 ◽

1990 ◽

Author(s):

Akihisa YOSHIDA ◽

Masaaki NUKAYAMA ◽

Yasunori ANDOH ◽

Masatoshi KITAGAWA ◽

Takashi HIRAO

Keyword(s):

Large Area ◽

Ion Doping ◽

Doping Technique

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a-Si TFT Technologies for AM-LCDS

MRS Proceedings ◽

10.1557/proc-336-749 ◽

1994 ◽

Vol 336 ◽

Cited By ~ 21

Author(s):

Nobuki Ibaraki

Keyword(s):

Implantation Technique ◽

Picture Quality ◽

Large Area ◽

Aperture Ratio ◽

Large Size ◽

Ion Doping ◽

Doping Technique ◽

Future Technologies ◽

Improved Characteristics

ABSTRACTA technical trend for a-Si TFTs is their application to large-size, high-pixel density AM-LCDs such as XGA, EWS, and HDTV. In order to realize these LCDs, the TFT device characteristics must be improved. Future technologies, which will be necessary to fabricate TFTs with improved characteristics are as follows(1) Fully self-aligned TFT technology: A SA-TFT structure reduces the feedthrough voltage caused by parasitic capacitance due to gate/source overlap. This results in an improved picture quality and a higher aperture ratio. Fabrication of such a structure would require ion doping technology.(2) Ion doping technology: This non-Mass-separated implantation technique has large area doping capability and much higher doping speed compared to conventional ion implantation technique. The Major problems with the ion doping technique is the implantation of unwanted species which deteriorate the quality of source/drain and channel regions of TFTs.

Download Full-text