a-Si TFT Technologies for AM-LCDS

1994 ◽  
Vol 345 ◽  
Author(s):  
Nobuki Ibaraki
Keyword(s):  
Implantation Technique ◽  
Picture Quality ◽  
Large Area ◽  
Aperture Ratio ◽  
Large Size ◽  
Ion Doping ◽  
Doping Technique ◽  
Future Technologies ◽  
Improved Characteristics

AbstractA technical trend for a-Si TFTs is their application to large-size, high-pixel density AMLCDs such as XGA, EWS, and HDTV. In order to realize these LCDs, the TFT device characteristics must be improved. Future technologies, which will be necessary to fabricate TFTs with improved characteristics are as follows,(1) Fully self-aligned TFT technology: A SA-TFT structure reduces the feedthrough voltage caused by parasitic capacitance due to gate/source overlap. This results in an improved picture quality and a higher aperture ratio. Fabrication of such a structure would require ion doping technology.(2) Ion doping technology: This non-mass-separated implantation technique has large area doping capability and much higher doping speed compared to conventional ion implantation technique. The major problems with the ion doping technique is the implantation of unwanted species which deteriorate the quality of source/drain and channel regions of TFTs.

a-Si TFT Technologies for AM-LCDS

1994 ◽  
Vol 336 ◽  
Author(s):  
Nobuki Ibaraki
Keyword(s):  
Implantation Technique ◽  
Picture Quality ◽  
Large Area ◽  
Aperture Ratio ◽  
Large Size ◽  
Ion Doping ◽  
Doping Technique ◽  
Future Technologies ◽  
Improved Characteristics

ABSTRACTA technical trend for a-Si TFTs is their application to large-size, high-pixel density AM-LCDs such as XGA, EWS, and HDTV. In order to realize these LCDs, the TFT device characteristics must be improved. Future technologies, which will be necessary to fabricate TFTs with improved characteristics are as follows(1) Fully self-aligned TFT technology: A SA-TFT structure reduces the feedthrough voltage caused by parasitic capacitance due to gate/source overlap. This results in an improved picture quality and a higher aperture ratio. Fabrication of such a structure would require ion doping technology.(2) Ion doping technology: This non-Mass-separated implantation technique has large area doping capability and much higher doping speed compared to conventional ion implantation technique. The Major problems with the ion doping technique is the implantation of unwanted species which deteriorate the quality of source/drain and channel regions of TFTs.

Application of a large area ion doping technique to a-Si:H TFT for LCD

1993 ◽  
pp. 331-335
Author(s):  
Akihisa Yoshida ◽  
Masatoshi Kitagawa ◽  
Takashi Hirao
Keyword(s):  
Large Area ◽  
Ion Doping ◽  
Doping Technique

Application of Large Area Ion-Doping Technique to AM-LCD

1994 ◽  
pp. 367-372
Author(s):  
Takashi Hirao ◽  
Akihisa Yoshida ◽  
Masatoshi Kitagawa
Keyword(s):  
Large Area ◽  
Ion Doping ◽  
Doping Technique

Impurity Doping into Single and Poly Crystalline Silicon by a Large Area Ion Doping Technique

1988 ◽  
Author(s):  
Akihisa YOSHIDA ◽  
Masatoshi KITAGAWA ◽  
Kentaro SETSUNE ◽  
Takashi HIRAO
Keyword(s):  
Crystalline Silicon ◽  
Large Area ◽  
Ion Doping ◽  
Impurity Doping ◽  
Doping Technique

scholarly journals Layer-engineered large-area exfoliation of graphene

2020 ◽  
Vol 6 (44) ◽  
pp. eabc6601
Author(s):  
Ji-Yun Moon ◽  
Minsoo Kim ◽  
Seung-Il Kim ◽  
Shuigang Xu ◽  
Jun-Hui Choi ◽  
...  
Keyword(s):  
Large Scale ◽  
Metal Films ◽  
Thin Metal Film ◽  
Large Area ◽  
Exfoliated Graphene ◽  
Large Size ◽  
Measurement Analysis ◽  
Two Dimensional Materials ◽  
Mechanical Cleavage

The competition between quality and productivity has been a major issue for large-scale applications of two-dimensional materials (2DMs). Until now, the top-down mechanical cleavage method has guaranteed pure perfect 2DMs, but it has been considered a poor option in terms of manufacturing. Here, we present a layer-engineered exfoliation technique for graphene that not only allows us to obtain large-size graphene, up to a millimeter size, but also allows selective thickness control. A thin metal film evaporated on graphite induces tensile stress such that spalling occurs, resulting in exfoliation of graphene, where the number of exfoliated layers is adjusted by using different metal films. Detailed spectroscopy and electron transport measurement analysis greatly support our proposed spalling mechanism and fine quality of exfoliated graphene. Our layer-engineered exfoliation technique can pave the way for the development of a manufacturing-scale process for graphene and other 2DMs in electronics and optoelectronics.

Large‐Area Ion Doping Technique with Bucket‐Type Ion Source for Polycrystalline Silicon Films

1990 ◽  
Vol 137 (11) ◽  
pp. 3522-3526 ◽  
Author(s):  
G. Kawachi ◽  
T. Aoyama ◽  
K. Miyata ◽  
Y. Ohno ◽  
A. Mimura ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Ion Source ◽  
Silicon Films ◽  
Large Area ◽  
Ion Doping ◽  
Doping Technique ◽  
Polycrystalline Silicon Films

Fabrication of a-Si:H TFT's by a Large Area Ion Doping Technique

1990 ◽  
Author(s):  
Akihisa YOSHIDA ◽  
Masaaki NUKAYAMA ◽  
Yasunori ANDOH ◽  
Masatoshi KITAGAWA ◽  
Takashi HIRAO
Keyword(s):  
Large Area ◽  
Ion Doping ◽  
Doping Technique

Fabrication of a-Si:H Thin Film Transistors on 4-inch Glass Substrates by a Large Area Ion Doping Technique

1991 ◽  
Vol 30 (Part 2, No. 1A) ◽  
pp. L67-L69 ◽  
Author(s):  
Akihisa Yoshida ◽  
Masaaki Nukayama ◽  
Yasunori Andoh ◽  
Masatoshi Kitagawa ◽  
Takashi Hirao
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Large Area ◽  
Glass Substrates ◽  
Ion Doping ◽  
Doping Technique

Convergent Beam Electron Diffraction

1978 ◽  
Vol 36 (3) ◽  
pp. 304-315
Author(s):  
G. Lehmpfuhl
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Crystal Surface ◽  
Diffraction Spot ◽  
Crystal Thickness ◽  
Large Area ◽  
Electron Microscopic ◽  
Additional Information ◽  
Microscopic Investigations

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.

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