Application of a large area ion doping technique to a-Si:H TFT for LCD

1993 ◽  
Vol 74 (1-2) ◽  
pp. 331-335 ◽  
Author(s):  
Akihisa Yoshida ◽  
Masatoshi Kitagawa ◽  
Takashi Hirao
Keyword(s):  
Large Area ◽  
Ion Doping ◽  
Doping Technique

a-Si TFT Technologies for AM-LCDS

1994 ◽  
Vol 345 ◽  
Author(s):  
Nobuki Ibaraki
Keyword(s):  
Implantation Technique ◽  
Picture Quality ◽  
Large Area ◽  
Aperture Ratio ◽  
Large Size ◽  
Ion Doping ◽  
Doping Technique ◽  
Future Technologies ◽  
Improved Characteristics

AbstractA technical trend for a-Si TFTs is their application to large-size, high-pixel density AMLCDs such as XGA, EWS, and HDTV. In order to realize these LCDs, the TFT device characteristics must be improved. Future technologies, which will be necessary to fabricate TFTs with improved characteristics are as follows,(1) Fully self-aligned TFT technology: A SA-TFT structure reduces the feedthrough voltage caused by parasitic capacitance due to gate/source overlap. This results in an improved picture quality and a higher aperture ratio. Fabrication of such a structure would require ion doping technology.(2) Ion doping technology: This non-mass-separated implantation technique has large area doping capability and much higher doping speed compared to conventional ion implantation technique. The major problems with the ion doping technique is the implantation of unwanted species which deteriorate the quality of source/drain and channel regions of TFTs.

Application of a large area ion doping technique to a-Si:H TFT for LCD

1993 ◽  
pp. 331-335
Author(s):  
Akihisa Yoshida ◽  
Masatoshi Kitagawa ◽  
Takashi Hirao
Keyword(s):  
Large Area ◽  
Ion Doping ◽  
Doping Technique

Application of Large Area Ion-Doping Technique to AM-LCD

1994 ◽  
pp. 367-372
Author(s):  
Takashi Hirao ◽  
Akihisa Yoshida ◽  
Masatoshi Kitagawa
Keyword(s):  
Large Area ◽  
Ion Doping ◽  
Doping Technique

Impurity Doping into Single and Poly Crystalline Silicon by a Large Area Ion Doping Technique

1988 ◽  
Author(s):  
Akihisa YOSHIDA ◽  
Masatoshi KITAGAWA ◽  
Kentaro SETSUNE ◽  
Takashi HIRAO
Keyword(s):  
Crystalline Silicon ◽  
Large Area ◽  
Ion Doping ◽  
Impurity Doping ◽  
Doping Technique

Large‐Area Ion Doping Technique with Bucket‐Type Ion Source for Polycrystalline Silicon Films

1990 ◽  
Vol 137 (11) ◽  
pp. 3522-3526 ◽  
Author(s):  
G. Kawachi ◽  
T. Aoyama ◽  
K. Miyata ◽  
Y. Ohno ◽  
A. Mimura ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Ion Source ◽  
Silicon Films ◽  
Large Area ◽  
Ion Doping ◽  
Doping Technique ◽  
Polycrystalline Silicon Films

Fabrication of a-Si:H TFT's by a Large Area Ion Doping Technique

1990 ◽  
Author(s):  
Akihisa YOSHIDA ◽  
Masaaki NUKAYAMA ◽  
Yasunori ANDOH ◽  
Masatoshi KITAGAWA ◽  
Takashi HIRAO
Keyword(s):  
Large Area ◽  
Ion Doping ◽  
Doping Technique

a-Si TFT Technologies for AM-LCDS

1994 ◽  
Vol 336 ◽  
Author(s):  
Nobuki Ibaraki
Keyword(s):  
Implantation Technique ◽  
Picture Quality ◽  
Large Area ◽  
Aperture Ratio ◽  
Large Size ◽  
Ion Doping ◽  
Doping Technique ◽  
Future Technologies ◽  
Improved Characteristics

ABSTRACTA technical trend for a-Si TFTs is their application to large-size, high-pixel density AM-LCDs such as XGA, EWS, and HDTV. In order to realize these LCDs, the TFT device characteristics must be improved. Future technologies, which will be necessary to fabricate TFTs with improved characteristics are as follows(1) Fully self-aligned TFT technology: A SA-TFT structure reduces the feedthrough voltage caused by parasitic capacitance due to gate/source overlap. This results in an improved picture quality and a higher aperture ratio. Fabrication of such a structure would require ion doping technology.(2) Ion doping technology: This non-Mass-separated implantation technique has large area doping capability and much higher doping speed compared to conventional ion implantation technique. The Major problems with the ion doping technique is the implantation of unwanted species which deteriorate the quality of source/drain and channel regions of TFTs.

Fabrication of a-Si:H Thin Film Transistors on 4-inch Glass Substrates by a Large Area Ion Doping Technique

1991 ◽  
Vol 30 (Part 2, No. 1A) ◽  
pp. L67-L69 ◽  
Author(s):  
Akihisa Yoshida ◽  
Masaaki Nukayama ◽  
Yasunori Andoh ◽  
Masatoshi Kitagawa ◽  
Takashi Hirao
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Large Area ◽  
Glass Substrates ◽  
Ion Doping ◽  
Doping Technique

Multilayer Graphene-Based Carbon Interconnect

2012 ◽  
Vol 1407 ◽  
Author(s):  
Tianhua Yu ◽  
Edwin Kim ◽  
Nikhil Jain ◽  
Bin Yu
Keyword(s):  
Performance Metrics ◽  
Monolayer Graphene ◽  
Multilayer Graphene ◽  
Large Area ◽  
Electrical Stress ◽  
Oxygen Plasma Etching ◽  
Doping Technique ◽  
System Breakdown ◽  
Grown Graphene ◽  
On Chip

ABSTRACT3D stacked (or uncorrelated) multilayer graphene (s-MLG) is investigated as a potential material platform for carbon-based on-chip interconnects. S-MLG samples are prepared by repeatedly transferring and stacking the large-area CVD-grown graphene monolayers, followed by wire patterning and oxygen plasma etching of graphene. We observed superior wire conduction of s-MLG over that of monolayer graphene or ABAB-stacked multilayer graphene. Further reduction of s-MLG resistivity is anticipated with increasing number of stacked layers. Electrical stress-induced doping technique is used to engineer the Dirac point, as well as to reduce graphene-to-metal contact resistance, improving the overall performance metrics of the s-MLG system. Breakdown experiments show that the current-carrying capacity of s-MLG is significantly enhanced as compared with that of monolayer graphene.

Oxidized treatment of high Tc superconducting thin films by plasma-ion doping technique

1990 ◽  
Author(s):  
Masatoshi Kitagawa ◽  
Shigenori Hayashi ◽  
Takeshi Kamada ◽  
Tomiyo Yoshida ◽  
Akihisa Yoshida ◽  
...  
Keyword(s):  
Thin Films ◽  
Superconducting Thin Films ◽  
High Tc ◽  
Ion Doping ◽  
Doping Technique
Sign in / Sign up

Export Citation Format

Share Document