AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy

Mapping Intimacies ◽

10.7567/ssdm.1997.b-11-5 ◽

1997 ◽

Author(s):

Takashi Egawa ◽

Akira Ogawa ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Laser Diodes ◽

Active Regions ◽

Droplet Epitaxy ◽

Si Substrates ◽

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AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.1552 ◽

1998 ◽

Vol 37 (Part 1, No. 3B) ◽

pp. 1552-1555 ◽

Author(s):

Takashi Egawa ◽

Akira Ogawa ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Laser Diodes ◽

Active Regions ◽

Droplet Epitaxy ◽

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First fabrication of AlGaAs/GaAs laser diodes with GaAs islands active regions on Si grown by droplet epitaxy

International Electron Devices Meeting. Technical Digest ◽

10.1109/iedm.1996.553615 ◽

2002 ◽

Author(s):

T. Egawa ◽

A. Ogawa ◽

T. Jimbo ◽

M. Umeno

Keyword(s):

Laser Diodes ◽

Active Regions ◽

Droplet Epitaxy ◽

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Low stress and low dislocation density AlGaAs/GaAs laser diodes fabricated on Si substrates

13th IEEE International Semiconductor Laser Conference ◽

10.1109/islc.1992.763568 ◽

2005 ◽

Author(s):

N. Wada ◽

S. Yosfumi ◽

S. Sakai ◽

M. Fukui

Keyword(s):

Dislocation Density ◽

Laser Diodes ◽

Si Substrates ◽

Low Dislocation Density ◽

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1/fnoise in double‐heterojunction AlGaAs/GaAs laser diodes on GaAs and on Si substrates

Journal of Applied Physics ◽

10.1063/1.346247 ◽

1990 ◽

Vol 68 (8) ◽

pp. 4087-4090 ◽

Author(s):

R. Z. Fang ◽

A. D. van Rheenen ◽

A. van der Ziel ◽

A. C. Young ◽

J. P. van der Ziel

Keyword(s):

Laser Diodes ◽

Si Substrates ◽

Double Heterojunction ◽

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Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates

Applied Physics Letters ◽

10.1063/1.114930 ◽

1995 ◽

Vol 67 (20) ◽

pp. 2995-2997 ◽

Author(s):

T. Egawa ◽

Y. Hasegawa ◽

T. Jimbo ◽

M. Umeno

Keyword(s):

Degradation Mechanism ◽

Laser Diodes ◽

Si Substrates ◽

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Wavelength tuning of InGaAs/GaAs laser diodes by the application of high hydrostatic pressure

Proceedings of 2002 4th International Conference on Transparent Optical Networks (IEEE Cat. No.02EX551) ◽

10.1109/icton.2002.1007861 ◽

2003 ◽

Author(s):

F. Dybala ◽

P. Adamiec ◽

A. Bercha ◽

W. Trzeciakowski

Keyword(s):

Hydrostatic Pressure ◽

High Hydrostatic Pressure ◽

Laser Diodes ◽

Wavelength Tuning ◽

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Bulk changes during catastrophic degradation of GaAs laser diodes

phys stat sol (a) ◽

10.1002/pssa.19700010210 ◽

1970 ◽

Vol 1 (2) ◽

pp. 279-282 ◽

Author(s):

H. R. Wittmann ◽

J. L. Smith

Keyword(s):

Laser Diodes ◽

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Study of correlation between optical characteristics and mirror facet temperature of the active region in high-power SCH SQW InGaAs/GaAs and InGaAsP/GaAs laser diodes

10.1117/12.176609 ◽

1994 ◽

Author(s):

Nikolay I. Katsavets ◽

Dmitry Z. Garbuzov ◽

T. A. Grishina ◽

Irena E. Kudrik ◽

Petr V. Pitkianen

Keyword(s):

Active Region ◽

Laser Diodes ◽

Optical Characteristics ◽

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High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.99992 ◽

1988 ◽

Vol 53 (14) ◽

pp. 1248-1250 ◽

Author(s):

Jae‐Hoon Kim ◽

Akbar Nouhi ◽

Gouri Radhakrishnan ◽

John K. Liu ◽

Robert J. Lang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Laser Diodes ◽

High Peak ◽

High Peak Power ◽

Si Substrates ◽

Low Threshold ◽

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Thermomechanical degradation of single and multiple quantum well AlGaAs/GaAs laser diodes

Microelectronics Reliability ◽

10.1016/j.microrel.2017.07.005 ◽

2017 ◽

Vol 76-77 ◽

pp. 588-591 ◽

Author(s):

J. Souto ◽

J.L. Pura ◽

A. Torres ◽

J. Jiménez

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Laser Diodes ◽

Multiple Quantum ◽

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