scholarly journals Thermomechanical degradation of single and multiple quantum well AlGaAs/GaAs laser diodes

2017 ◽  
Vol 76-77 ◽  
pp. 588-591 ◽  
Author(s):  
J. Souto ◽  
J.L. Pura ◽  
A. Torres ◽  
J. Jiménez
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Gaas Laser

1.5μm λ/4 shifted multiple quantum well distributed feedback laser diodes

1988 ◽  
Vol 24 (23) ◽  
pp. 1408 ◽  
Author(s):  
T. Sasaki ◽  
S. Takano ◽  
N. Henmi ◽  
H. Yamada ◽  
M. Kitamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser

1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE

1988 ◽  
Vol 24 (16) ◽  
pp. 1045 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
N. Henmi ◽  
T. Sasaki ◽  
H. Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser

GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes

1990 ◽  
Vol 2 (7) ◽  
pp. 456-458 ◽  
Author(s):  
Y.H. Wang ◽  
K. Tai ◽  
J.D. Wynn ◽  
M. Hong ◽  
R.J. Fischer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Cavity Surface ◽  
Multiple Quantum ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

The Integration of InxGa1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1203-L1205 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
Ping Mei ◽  
David W. Treat ◽  
Mark Teepe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C

2016 ◽  
Vol 94 (7) ◽  
pp. 640-644 ◽  
Author(s):  
Santosh Chackrabarti ◽  
Dhrub Sharma ◽  
Shereena Joseph ◽  
Tho-alfiqar A. Zaker ◽  
A.K. Hafiz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Band Gap ◽  
Characteristic Temperature ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Spectral Shifts ◽  
Band Gap Narrowing

We report on the temperature-dependent spectral shifts in low power 670 nm AlGaInP multiple quantum well red laser diodes due to band gap narrowing at room temperatures (5–45 °C). The spectral shift mechanism is explored with a threshold current density of 11.41 kA/cm2 and a good characteristic temperature of 114 K. The photoluminescence peak intensity shifts towards higher wavelengths and the full width at half maximum increases with increase in temperature from 5 to 45 °C. We use a Hamiltonian system considering the effective mass approximation to formulate the carrier concentrations. The band gap narrowing value determined by a simple formula amounts to 59.15 meV and displays N1/3 dependence at higher densities. The carrier density dependence conveys that the redshift of the spectral emission is due to band gap narrowing.

Comparison of 1.3-µm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers

2003 ◽  
Vol 42 (Part 2, No. 12B) ◽  
pp. L1507-L1508
Author(s):  
Ming-Yuan Wu ◽  
Po-Hsun Lei ◽  
Chia-Lung Tsai ◽  
Chih-Wei Hu ◽  
Meng-Chyi Wu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser
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