Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p+-ZnSe by Excimer Laser Doping Technique

1997 ◽  
Author(s):  
Toru Aoki ◽  
Akira Ishibashi ◽  
Masaharu Nagai ◽  
Yoshinori Hatanaka
Keyword(s):  
Excimer Laser ◽  
Ohmic Contact ◽  
Laser Doping ◽  
Doping Technique ◽  
P Type

scholarly journals Emitter formation using laser doping technique on n- and p-type c-Si substrates

2015 ◽  
Vol 336 ◽  
pp. 182-187 ◽  
Author(s):  
G. López ◽  
P. Ortega ◽  
M. Colina ◽  
C. Voz ◽  
I. Martín ◽  
...  
Keyword(s):  
Laser Doping ◽  
Si Substrates ◽  
Type C ◽  
Doping Technique ◽  
P Type

Formation of p-type layer by KrF excimer laser doping of carbon into GaAs in CH4 gas ambient

1989 ◽  
Vol 49 (6) ◽  
pp. 723-727 ◽  
Author(s):  
K. Sugioka ◽  
K. Toyoda ◽  
K. Tachi ◽  
M. Otsuka
Keyword(s):  
Excimer Laser ◽  
Laser Doping ◽  
Type Layer ◽  
Krf Excimer Laser ◽  
P Type

Heavily doped p-type ZnSe layer formation by excimer laser doping

1998 ◽  
Vol 184-185 ◽  
pp. 425-428 ◽  
Author(s):  
Y. Hatanaka ◽  
T. Aoki ◽  
T. Arakawa ◽  
D. Noda ◽  
Y. Nakanishi
Keyword(s):  
Excimer Laser ◽  
Layer Formation ◽  
Laser Doping ◽  
Znse Layer ◽  
Heavily Doped ◽  
P Type

scholarly journals Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells

2015 ◽  
Vol 77 ◽  
pp. 752-758 ◽  
Author(s):  
Gema López ◽  
Pablo R. Ortega ◽  
Isidro Martín ◽  
Cristóbal Voz ◽  
Anna B. Morales ◽  
...  
Keyword(s):  
Solar Cells ◽  
Laser Doping ◽  
Si Solar Cells ◽  
Doping Technique ◽  
P Type ◽  
Selective Emitters

p-Type ZnO Layer Formation by Excimer Laser Doping

2002 ◽  
Vol 229 (2) ◽  
pp. 911-914 ◽  
Author(s):  
T. Aoki ◽  
Y. Shimizu ◽  
A. Miyake ◽  
A. Nakamura ◽  
Y. Nakanishi ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Layer Formation ◽  
Laser Doping ◽  
P Type

Morphological study of the Al–Ti ohmic contact to p-type SiC

2002 ◽  
Vol 46 (5) ◽  
pp. 689-693 ◽  
Author(s):  
S.E. Mohney ◽  
B.A. Hull ◽  
J.Y. Lin ◽  
J. Crofton
Keyword(s):  
Ohmic Contact ◽  
Morphological Study ◽  
P Type

Ohmic contact to nonpolara-plane p-type GaN using Ni/Au

2014 ◽  
Vol 53 (5S3) ◽  
pp. 05HA04 ◽  
Author(s):  
Jae-Kwan Kim ◽  
Dong-min Lee ◽  
Sung-Nam Lee ◽  
Keun-Man Song ◽  
Jae-Sik Yoon ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
P Type

Phosphorus and Boron Doping of Silicon Thin Films Using ArF Excimer Laser

1991 ◽  
Vol 236 ◽  
Author(s):  
A. Slaoui ◽  
M. Elliq ◽  
H. Pattyn ◽  
E. Fogarassy ◽  
S. De Unamuno ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Excimer Laser ◽  
Silicon Film ◽  
Boron Doping ◽  
Electrical Characteristics ◽  
Silicon Thin Films ◽  
Shallow Junctions ◽  
Doping Technique ◽  
Arf Excimer Laser ◽  
B Doping

AbstractThis work describes phosphorus (P) and boron (B) doping of polysilicon filns deposited on quartz. Doping is achieved by means of a pulsed ArF excimer laser to melt a controlled thickness of amorphous or polycristalline silicon film coated with a spinon silicate glass (SOG) film containing the dopant (P or B). We have investigated the influence of doping parameters such as laser fluence, number of shots and dopant film thickness on the sheet resistance and the incorporation rate. From these results, we have shown that high doped, shallow junctions presenting sheet resistance lower than 5 kΩ/∠ can be obtained. Poly-Si TFT's with good electrical characteristics were successfully fabricated using this doping technique.

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