Phosphorus and Boron Doping of Silicon Thin Films Using ArF Excimer Laser

1991 ◽  
Vol 236 ◽  
Author(s):  
A. Slaoui ◽  
M. Elliq ◽  
H. Pattyn ◽  
E. Fogarassy ◽  
S. De Unamuno ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Excimer Laser ◽  
Silicon Film ◽  
Boron Doping ◽  
Electrical Characteristics ◽  
Silicon Thin Films ◽  
Shallow Junctions ◽  
Doping Technique ◽  
Arf Excimer Laser ◽  
B Doping

AbstractThis work describes phosphorus (P) and boron (B) doping of polysilicon filns deposited on quartz. Doping is achieved by means of a pulsed ArF excimer laser to melt a controlled thickness of amorphous or polycristalline silicon film coated with a spinon silicate glass (SOG) film containing the dopant (P or B). We have investigated the influence of doping parameters such as laser fluence, number of shots and dopant film thickness on the sheet resistance and the incorporation rate. From these results, we have shown that high doped, shallow junctions presenting sheet resistance lower than 5 kΩ/∠ can be obtained. Poly-Si TFT's with good electrical characteristics were successfully fabricated using this doping technique.

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

2015 ◽  
Vol 1120-1121 ◽  
pp. 361-368
Author(s):  
Li Jie Deng ◽  
Wei He ◽  
Zheng Ping Li
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Silicon Film ◽  
Threshold Energy ◽  
Nanocrystalline Silicon ◽  
Lateral Growth ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Excimer Laser Crystallization

Nanocrystalline silicon (nc-Si) thin film on glass substrate is subjected to excimer laser crystallized by varying the laser energy density in the range of 50~600 mJ/cm2. The effect of excimer laser crystallization on the structure of silicon film is investigated using Raman spectroscopy, X-ray diffraction, atomic force microscopy and scanning electron microscopy. The results show that polycrystalline silicon thin films can be obtained by excimer laser crystallization of nc-Si films. A laser threshold energy density of 200 mJ/cm2 is estimated from the change of crystalline fraction and surface roughness of the treated films. The growth of grain is observed and the crystallization mechanism is discussed based on the super lateral growth model. The nanocrystalline silicon grains in the films act as seeds for lateral growth to large grains.

ArF Excimer Laser Doping into Amorphous Silicon thin films

1991 ◽  
Vol 219 ◽  
Author(s):  
M. Elliq ◽  
A. Slaoui ◽  
E. Fogarassy ◽  
H. Pattyn ◽  
R. Stuck ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Surface Concentration ◽  
Silicon Thin Film ◽  
Molten Layer ◽  
Silicon Thin Films ◽  
One Step ◽  
Arf Excimer Laser ◽  
Rate Limiting

ABSTRACTDoping of amorphous silicon (a-Si or a-Si:H) coated by a spin-on oxide film containing the dopant (phosphorus or boron) using an ArF excimer laser has been investigated as a function of laser fluence, number of pulses and dopant film thickness. From these results, it is found that the surface concentration and the junction depth vary with the number of pulses, and that the doping process is rate limiting. Sheet resistance lower than 10 kΩ/□ have been obtained. It is also shown that for a-Si:H films, laser irradiation produces exodiffusion of hydrogen from the molten layer resulting in rough surface. This one-step process seems suitable for polycrystalline silicon thin film transistors (TFT's) fabrication.

Boron doping of silicon by ArF excimer laser irradiation in B2H6

1990 ◽  
Vol 67 (12) ◽  
pp. 7204-7210 ◽  
Author(s):  
S. Matsumoto ◽  
S. Yoshioka ◽  
J. Wada ◽  
S. Inui ◽  
K. Uwasawa
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Boron Doping ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser

One-step growth of polycrystalline silicon thin films at low-temperature by ArF excimer laser-induced photo-CVD

1992 ◽  
Vol 54 ◽  
pp. 35-40 ◽  
Author(s):  
M. Elliq ◽  
E. Fogarassy ◽  
C. Fuchs ◽  
J.P. Stoquert ◽  
S. de Unamuno ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films ◽  
One Step ◽  
Step Growth ◽  
Arf Excimer Laser

Excimer Laser-Induced Shallow Diffusion of Boron

1986 ◽  
Vol 71 ◽  
Author(s):  
S. Kato ◽  
T. Nagahori ◽  
S. Matsumoto ◽  
T. Fujioka
Keyword(s):  
Energy Density ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Silicon Substrate ◽  
Laser Energy ◽  
Gas Pressure ◽  
Laser Energy Density ◽  
Junction Depth ◽  
Arf Excimer Laser ◽  
Probe Measurements

AbstractThe very shallow junction of boron has been formed by the irradiation of ArF excimer laser on silicon substrate set in BF3 ambient. The sheet resistance decreases with the increase of the number of pulses and saturates above 150 pulses. It also decreases with increasing both gas pressure and laser energy density. The junction depth increases with increasing the number of pulses, ranging from about 400 Å to 2000 Å. It is confirmed from SIMS and four-point probe measurements that boron atoms diffused are electrically activated up to the concentration of about 1020cm−3.

A Systematic Study of the Formation of Nano-Tips on Silicon Thin Films by Excimer Laser Irradiation

2005 ◽  
Vol 872 ◽  
Author(s):  
D.G. Georgiev ◽  
R.J. Baird ◽  
I. Avrutsky ◽  
G. Auner ◽  
G. Newaz ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Single Pulse ◽  
Crystal Silicon ◽  
Force Microscopy ◽  
Silicon Thin Films ◽  
Direct Laser ◽  
Direct Laser Fabrication ◽  
Krf Excimer Laser

AbstractRecently, we reported conditions for controllable, direct laser fabrication of sharp conical tips with heights of about one micrometer and apical radii of curvature of several tens of nanometers. An individual cone is formed when a single-crystal silicon film on an insulator substrate is irradiated in air environment with a single pulse from a KrF excimer laser, homogenized and shaped to a circular spot several microns in diameter. In this work, we present a study of the formation of such tips as a function of the laser fluence, the film thickness, and the diameter of the irradiated spot. Atomic force microscopy and scanning electron microscopy were used to study the topography of the structures. A simple mechanism of formation based on movement of melted material is proposed. We have also studied structures (nano-ridges) that resulted from irradiation with narrow lines (width of several microns) instead of circular spots.

High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
High Resolution ◽  
Laser Beam ◽  
Thin Layer ◽  
Functional Groups ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Large Area ◽  
Three Solutions ◽  
Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

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