Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection

2000 ◽  
Author(s):  
Yuichiro Mitani ◽  
Hideki Satake ◽  
Hitoshi Ito ◽  
Akira Toriumi
Keyword(s):  
Leakage Current ◽  
Electron Injection ◽  
Interface State ◽  
State Generation ◽  
Stress Induced Leakage Current

Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2395-L2397 ◽  
Author(s):  
Naoki Yasuda ◽  
Hiroshi Nakamura ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi ◽  
Masakazu Kakumu
Keyword(s):  
Electron Injection ◽  
Interface State ◽  
Generation Mechanism ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
State Generation

Gate Oxynitride Grown in N2O and Annealed in NO Using Rapid Thermal Processing

1995 ◽  
Vol 387 ◽  
Author(s):  
S. C. Sun ◽  
C. H. Chen ◽  
J. C. Lou ◽  
L. W. Yen ◽  
C. J. Lin
Keyword(s):  
Gate Dielectrics ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Interface State ◽  
No Oxidation ◽  
Nitrogen Accumulation ◽  
Electrical Stress ◽  
Wide Range ◽  
State Generation ◽  
Stress Induced Leakage Current

AbstractIn this paper a new technique for the formation of high quality ultrathin gate dielectrics is proposed. Gate oxynitride was first grown in N2O and then annealed by in-situ rapid thermal NO-nitridation. This approach has the advantage of providing a tighter nitrogen distribution and a higher nitrogen accumulation at or near the Si-SiO2 interface than either N2O oxynitride or nitridation of SiO2 in the NO ambient. It is applicable to a wide range of oxide thickness because the initial rapid thermal N2O oxidation rate is slow but not as self-limited as NO oxidation. The resulting gate dielectrics have reduced charge trapping, lower stress-induced leakage current and significant resistance to interface state generation under electrical stress

SiC/SiO2 interface-state generation by electron injection

1999 ◽  
Vol 85 (12) ◽  
pp. 8292-8298 ◽  
Author(s):  
V. V. Afanas’ev ◽  
A. Stesmans ◽  
M. Bassler ◽  
G. Pensl ◽  
M. J. Schulz ◽  
...  
Keyword(s):  
Electron Injection ◽  
Interface State ◽  
State Generation

Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC

2007 ◽  
Vol 91 (15) ◽  
pp. 153503 ◽  
Author(s):  
John Rozen ◽  
Sarit Dhar ◽  
S. T. Pantelides ◽  
L. C. Feldman ◽  
Sanwu Wang ◽  
...  
Keyword(s):  
Electron Injection ◽  
Interface State ◽  
State Generation

Measurements of Hydrogen Redistribution in Hot Electron Injection of Mos Capacitors

1992 ◽  
Vol 284 ◽  
Author(s):  
A. D. Marwick ◽  
D. A. Buchanan ◽  
D. J. Dimaria ◽  
Phil Saunders
Keyword(s):  
Nuclear Reaction ◽  
Depth Profiling ◽  
Electron Injection ◽  
Interface State ◽  
Hot Electron ◽  
Mos Capacitors ◽  
Hot Electron Injection ◽  
State Generation ◽  
Large Peak ◽  
Redistribution Of Hydrogen

ABSTRACTRedistribution of hydrogen caused by hot electron injection has been studied in large Al-gate capacitors using internal photemission followed by hydrogen depth profiling with the 15 N nuclear reaction. A large peak of hydrogen (∼ 1015 at /cm2) at the Al/SiO2 interface due to a hydrated layer on the surface of the SiO2 was found to act as a source of hydrogen during the photoinjection. A small fraction of the hydrogen released from this peak was found to be re-trapped near the Si/;SiO2 interface if a field of >1 MV/cm was applied to the SiO2 during the injection. Up to 2 × 1014 atoms/cm2 of hydrogen were found to be trapped at this interface for injected fluences up to 5 C/cm2. These results are discussed in terms of current models of interface state generation involving hydrogen.

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