High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD

2005 ◽  
Author(s):  
Takuya Wakamiya ◽  
Hiromasa Ohmi ◽  
Hiroaki Kakiuchi ◽  
Heiji Watanabe ◽  
Kiyoshi Yasutake ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Low Temperatures ◽  
Atmospheric Pressure Plasma ◽  
High Rate ◽  
Plasma Cvd ◽  
Pressure Plasma

High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

2008 ◽  
Vol 517 (1) ◽  
pp. 242-244 ◽  
Author(s):  
K. Yasutake ◽  
H. Ohmi ◽  
Y. Kirihata ◽  
H. Kakiuchi
Keyword(s):  
Atmospheric Pressure ◽  
Low Temperatures ◽  
Atmospheric Pressure Plasma ◽  
Plasma Cvd ◽  
High Quality ◽  
Pressure Plasma

In situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD

2008 ◽  
Vol 40 (6-7) ◽  
pp. 984-987 ◽  
Author(s):  
Y. Kirihata ◽  
T. Nomura ◽  
H. Ohmi ◽  
H. Kakiuchi ◽  
K. Yasutake
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Low Temperatures ◽  
Atmospheric Pressure Plasma ◽  
Plasma Cvd ◽  
Pressure Plasma

In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD

2019 ◽  
Vol 25 (8) ◽  
pp. 309-315 ◽  
Author(s):  
Takayuki Ohnishi ◽  
Yutaka Kirihata ◽  
Hiromasa Ohmi ◽  
Hiroaki Kakiuchi ◽  
Kiyoshi Yasutake
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Low Temperatures ◽  
Atmospheric Pressure Plasma ◽  
Plasma Cvd ◽  
Selective Epitaxial Growth ◽  
Pressure Plasma

High-rate preparation of thin Si films by atmospheric-pressure plasma enhanced chemical transport

2008 ◽  
Vol 40 (6-7) ◽  
pp. 979-983 ◽  
Author(s):  
Daiki Kamada ◽  
Kazuya Kishimoto ◽  
Hiroaki Kakiuchi ◽  
Kiyoshi Yasutake ◽  
Hiromasa Ohmi
Keyword(s):  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Chemical Transport ◽  
High Rate ◽  
Pressure Plasma ◽  
Si Films
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