Epitaxial Growth of Bi2Te3 Topological Insulator Thin Films with Persistent Linear Magnetoresistance Behaviors

Author(s):  
H.Y. Lee ◽  
Y.S. Chen ◽  
Y.C. Lin ◽  
Y.C. Lee ◽  
C.T. Liang ◽  
...  
2013 ◽  
Vol 102 (1) ◽  
pp. 012102 ◽  
Author(s):  
B. A. Assaf ◽  
T. Cardinal ◽  
P. Wei ◽  
F. Katmis ◽  
J. S. Moodera ◽  
...  

2017 ◽  
Vol 111 (23) ◽  
pp. 232105 ◽  
Author(s):  
Wen Jie Wang ◽  
Kuang Hong Gao ◽  
Qiu Lin Li ◽  
Zhi-Qing Li

2021 ◽  
Vol 2103 (1) ◽  
pp. 012086
Author(s):  
A K Kaveev ◽  
D N Bondarenko ◽  
O E Tereshchenko

Abstract The possibility of epitaxial growth of Pb0.7Sn0.3Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, to a significant extent, the smoothness of the epitaxial layer surface, which is extremely important for further transport measurements of the films. Analysis of the grown films surface morphology made it possible to establish the average value of the height and lateral size of the terraces and islands forming Pb0.7Sn0.3Te surface.


2011 ◽  
Vol 109 (10) ◽  
pp. 103702 ◽  
Author(s):  
Liang He ◽  
Faxian Xiu ◽  
Yong Wang ◽  
Alexei V. Fedorov ◽  
Guan Huang ◽  
...  

2017 ◽  
Vol 29 (50) ◽  
pp. 505601 ◽  
Author(s):  
Sourabh Singh ◽  
R K Gopal ◽  
Jit Sarkar ◽  
Atul Pandey ◽  
Bhavesh G Patel ◽  
...  

2015 ◽  
Vol 64 (7) ◽  
pp. 077201
Author(s):  
Guan Tong ◽  
Teng Jing ◽  
Wu Ke-Hui ◽  
Li Yong-Qing

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