The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films

Abstract The possibility of epitaxial growth of Pb0.7Sn0.3Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, to a significant extent, the smoothness of the epitaxial layer surface, which is extremely important for further transport measurements of the films. Analysis of the grown films surface morphology made it possible to establish the average value of the height and lateral size of the terraces and islands forming Pb0.7Sn0.3Te surface.

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Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.113 ◽

2009 ◽

Vol 615-617 ◽

pp. 113-116 ◽

Cited By ~ 8

Author(s):

Kazutoshi Kojima ◽

Hajime Okumura ◽

Kazuo Arai

Keyword(s):

Surface Morphology ◽

Epitaxial Growth ◽

Epitaxial Layer ◽

Flow Rate ◽

Growth Conditions ◽

Layer Surface ◽

Specular Surface ◽

Homoepitaxial Growth ◽

Angle Difference ◽

The Face

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.

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4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.99 ◽

2010 ◽

Vol 645-648 ◽

pp. 99-102 ◽

Cited By ~ 7

Author(s):

Kazutoshi Kojima ◽

Sachiko Ito ◽

Junji Senzaki ◽

Hajime Okumura

Keyword(s):

Surface Morphology ◽

Epitaxial Growth ◽

Growth Temperature ◽

Growth Conditions ◽

Step Bunching ◽

Homoepitaxial Growth ◽

Blocking Voltage ◽

Basal Plane Dislocation ◽

Epilayer Surface

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

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Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.954.31 ◽

2019 ◽

Vol 954 ◽

pp. 31-34

Author(s):

Guo Guo Yan ◽

Xing Fang Liu ◽

Feng Zhang ◽

Zhan Wei Shen ◽

Wan Shun Zhao ◽

...

Keyword(s):

Growth Rate ◽

Surface Morphology ◽

Epitaxial Growth ◽

Growth Temperature ◽

Epitaxial Layers ◽

Homoepitaxial Growth ◽

Influence Mechanism

Homoepitaxial growths of 4H-SiC were performed on Si-face (0001) on-axis substrates in a SiH4-C2H4-H2-HCl system by using our home-made vertical hot wall CVD reactor. The influence mechanism of the growth temperature and C/Si ratio on the morphology and growth rate was studied. It is found that the steps in the epilayer become more clear with the increasing temperatures. The result indicates that the C/Si ratio window of on-axis epitaxial growth is very narrow. Only when the C/Si ratio was 1.2, a slightly improved surface morphology can be achieved. The results indicate that 4H-SiC epitaxial layers were obtained on on-axis substrates and the films were highly-oriented 4H-SiC.

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Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2003.12.081 ◽

2004 ◽

Vol 266 (4) ◽

pp. 467-474 ◽

Cited By ~ 6

Author(s):

Toru Ujihara ◽

Eiji Kanda ◽

Kazuo Obara ◽

Kozo Fujiwara ◽

Noritaka Usami ◽

...

Keyword(s):

Thin Films ◽

Liquid Phase ◽

Surface Morphology ◽

Liquid Phase Epitaxy ◽

Growth Temperature ◽

Silicon Thin Films

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LPE Growth of Textured KNbO3 Film Using SrTiO3 Substrate and V2O5 Flux

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.11-12.109 ◽

2006 ◽

Vol 11-12 ◽

pp. 109-112

Author(s):

T. Hibino ◽

Kenichi Kakimoto ◽

Hitoshi Ohsato

Keyword(s):

Thin Films ◽

Phase Diagram ◽

Growth Rate ◽

Liquid Phase ◽

Surface Morphology ◽

Liquid Phase Epitaxy ◽

Growth Temperature ◽

Film Growth ◽

Lower Growth ◽

Lower Growth Temperature

KNbO3 thin films were grown on (100) and (110) SrTiO3 substrates by liquid phase epitaxy (LPE) technique. The film orientation and surface morphology were characterized by XRD and AFM, respectively. The limited phase diagram of K2O-Nb2O5-V2O5 system was prepared by DTA measurement to investigate the effect of V2O5 flux on the LPE growth of KNbO3 film. The use of V2O5 flux enhanced a film growth rate at lower growth temperature.

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Scanning Tunneung Microscope Studies of Initial Epitaxial Growth of YBa2Cu3O7-δ Thin Films

MRS Proceedings ◽

10.1557/proc-263-41 ◽

1992 ◽

Vol 263 ◽

Cited By ~ 5

Author(s):

Xiang-Yang Zheng ◽

D. H. Lowndes ◽

Shen Zhu ◽

R. J. Warmack

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Growth Temperature ◽

Lattice Mismatch ◽

Growth Mode ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Weber Type ◽

Film Substrate ◽

Miscut Angle

ABSTRACTThe initial stages of epitaxial growth of laser ablated YBa2Cu3O7-δ (YBCO) thin films on (001) SrTiO3, LaAlO3, and MgO substrates, and on slightly miscut LaA1O3 and SrTiO3, have been studied with scanning tunneling microscopy (STM). Surface images show that the initial YBCO growth mode can be either of the Stranski- Krastanov or the Volmer-Weber type, depending on the film-substrate lattice mismatch and the growth temperature. A small substrate miscut angle is found to strongly influence the growth mode of YBCO films. Screw dislocation-mediated growth is suppressed, and films grown at 800°C on (001) LaAlO3 substrates with miscut angle of 2.0° along <100> or <110> directions were found to consist of tilted platelets that are epitaxially aligned with the substrate crystal lattice.

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The Characteristics of ZnO Nanorods According to Growth Concentration on PES Substrate

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.754-755.498 ◽

2015 ◽

Vol 754-755 ◽

pp. 498-501

Author(s):

Hyun Min Lee ◽

Sang Hyun Kim ◽

Jae Heon Ock ◽

Nak Won Jang ◽

Hong Seung Kim

Keyword(s):

Thin Film ◽

Crystal Structure ◽

Thin Films ◽

Surface Morphology ◽

Band Gap ◽

Epitaxial Growth ◽

Zno Nanorods ◽

Zno Thin Film ◽

Electrical Characteristics ◽

Uv Visible

In particular, the PES substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of thin films growth for epitaxial growth by the use of a buffer layer on the amorphous PES substrate is essential. Therefore, in this study, we deposited ZnO thin-film on PES substrate, and grown ZnO nanorods at various ZnO concentrations during 1 hour. We used SEM, XRD, and HP 4145B for observe the structural and electrical characteristics of ZnO nanorods. UV-visible spectrometer was used to get the band gap and transmittance.

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