Microstructural Study of Bone Like Apatite Deposited by a Biomimetic Process: Recent Development

Author(s):  
Apurba Das ◽  
Jonmani Rabha ◽  
Pamu Dobbidi
2010 ◽  
Vol 47 (9) ◽  
pp. 487-499 ◽  
Author(s):  
Fernando Lasagni ◽  
Andrés Lasagni ◽  
Christian Holzapfel ◽  
Michael Engstler ◽  
Frank Mücklich

Author(s):  
Mohadeseh Bagherabadi ◽  
Gholamhossein Zohuri ◽  
Navid Ramezanian ◽  
Mahsa Kimiaghalam ◽  
Mostafa Khoshsefat

2021 ◽  
Vol 27 (S1) ◽  
pp. 3156-3158
Author(s):  
Elsa Ordoñez-Casanova ◽  
Hortensica Reyes Blas ◽  
Hector A. Trejo-Mandujano

1995 ◽  
Vol 10 (4) ◽  
pp. 843-852 ◽  
Author(s):  
N. Guelton ◽  
R.G. Saint-Jacques ◽  
G. Lalande ◽  
J-P. Dodelet

GaAs layers grown by close-spaced vapor transport on (100) Ge substrates have been investigated as a function of the experimental growth conditions. The effects on the microstructure of the surface preparation, substrate misorientation, and annealing were studied using optical microscopy and transmission electron microscopy. Microtwins and threading dislocations are suppressed by oxide desorption before deposition. Single domain GaAs layers have been obtained using a 50 nm thick double domain buffer layer on an annealed Ge substrate misoriented 3°toward [011]. The mismatch strain is mainly accommodated by dissociated 60°dislocations. These misfit dislocations extend along the interface by the glide of the threading dislocations inherited from the substrate, but strong interaction with antiphase boundaries (APB's) prevents them from reaching the interface. These results are discussed and compared with previous reports of GaAs growth on Ge(100).


2002 ◽  
Vol 336 (1-2) ◽  
pp. 52-58 ◽  
Author(s):  
E Huttunen-Saarivirta ◽  
T Tiainen ◽  
T Lepistö

2007 ◽  
Vol 20 (6) ◽  
pp. 511-515 ◽  
Author(s):  
Y L Cheung ◽  
E F Maher ◽  
J S Abell ◽  
I P Jones ◽  
Y Y Tse

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