scholarly journals Effect of Silicon Die Condition on the Breaking Load Performance of a Dam and Fill Semiconductor Package

Author(s):  
Jefferson Talledo

A semiconductor package has a silicon die on which an integrated circuit (IC) is fabricated. The die is singulated from a single wafer using processes like mechanical sawing or laser grooving. These processes have impact on the final condition of the silicon die after wafer singulation. This paper discusses a study on the effect of the die condition on the breaking load of a package with a dam and fills structure. The encapsulation material of this type of package has lower modulus when compared with the epoxy mold compound material used in most molded packages. The package breaking load was determined using 3-point bend test for two sets of packages. The first set of packages was assembled with silicon die produced using mechanical sawing. The second set was assembled with die produced using laser grooving. Results of the 3-point bend test showed that the breaking load of the package with die from mechanical sawing is higher compared with the package assembled with die from laser grooving. The study revealed that that the silicon die condition has significant effect on the robustness of the final package where the die is used.

2019 ◽  
Vol 9 (2) ◽  
pp. 3955-3958
Author(s):  
T. Subhani

In this study, honeycomb sandwich structures were prepared and tested. Facesheets of sandwich structures were manufactured by carbon fiber epoxy matrix composites while Nomex® honeycomb was used as core material. An epoxy-based adhesive film was used to bond the composite facesheets with honeycomb core. Four different curing temperatures ranging from 100oC to 130oC were applied with curing times of 2h and 3h. Three-point bend test was performed to investigate the mechanical performance of honeycomb sandwich structures and thus optimize the curing parameters. It was revealed that the combination of a temperature of 110oC along with a curing time of 2h offered the optimum mechanical performance together with low damage in honeycomb core and facesheets.


Author(s):  
Jefferson Talledo

This paper discusses the characterization of an integrated circuit (IC) silicon die fracture strength to have a realistic die crack assessment. The evaluation was conducted using a 3-point bend test setup to measure the die strength of actual IC dies. Both the active side and the back side of the IC die were tested for 2 types of dies with different active side circuit layout. Results showed that the difference in the die active side circuit layout or structure has impact on die strength. It was also found that the active side was weaker than the back side. This implies that both the active side and the back side of an actual IC die must be subjected to fracture strength characterization to have an assessment that would be in a better agreement with real condition. Using only the strength of the back side would result in over-estimating the die strength. The common approach of using the fracture strength of the die back side to characterize the die strength is not realistic and can mislead the assessment of die crack or semiconductor package robustness.


2018 ◽  
Vol 919 ◽  
pp. 257-265 ◽  
Author(s):  
Jan Kledrowetz ◽  
Jakub Javořík ◽  
Rohitha Keerthiwansa ◽  
Pavel Nekoksa

This paper studies different modelling methodologies for a calculation of the three point bend test. Test samples are composed of a rubber matrix and either steel or textile cords reinforcement. Prior to the bending tests, all of the used materials including the matrix and the reinforcement were measured to find out their mechanical properties. Rubber materials were described using hyperelastic models. FEM software MSC Marc/Mentat is employed as a calculation tool and its various functionalities are utilized for a description of the test composite models. The main observed outcome is a dependence of the vertical force causing the test sample deformation on the amount of the deformation. Calculated results are compared to each other and to measurements. Then, all the modelling techniques are evaluated.


1997 ◽  
Vol 20 (11) ◽  
pp. 1605-1616 ◽  
Author(s):  
T. Lube ◽  
M. Manner ◽  
R. Danzer
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