scholarly journals Fracture Strength Characterization of the Die Active Side and Back Side for a Realistic Die Crack Assessment

2021 ◽  
pp. 84-90
Author(s):  
Jefferson Talledo
Keyword(s):  
Fracture Strength ◽  
Integrated Circuit ◽  
Back Side ◽  
Circuit Layout ◽  
The Common ◽  
Point Bend Test ◽  
The Difference ◽  
Point Bend ◽  
Strength Characterization

This paper discusses the characterization of an integrated circuit (IC) silicon die fracture strength to have a realistic die crack assessment. The evaluation was conducted using a 3-point bend test setup to measure the die strength of actual IC dies. Both the active side and the back side of the IC die were tested for 2 types of dies with different active side circuit layout. Results showed that the difference in the die active side circuit layout or structure has impact on die strength. It was also found that the active side was weaker than the back side. This implies that both the active side and the back side of an actual IC die must be subjected to fracture strength characterization to have an assessment that would be in a better agreement with real condition. Using only the strength of the back side would result in over-estimating the die strength. The common approach of using the fracture strength of the die back side to characterize the die strength is not realistic and can mislead the assessment of die crack or semiconductor package robustness.

scholarly journals Comparison of Silicon Die Strength Using Different Loading Anvil Shapes

2021 ◽  
pp. 17-23
Author(s):  
Jefferson Talledo
Keyword(s):  
Statistical Analysis ◽  
Fracture Strength ◽  
Bend Test ◽  
Flexural Stress ◽  
Strength Measurement ◽  
Wedge Shape ◽  
Point Bend Test ◽  
Point Bend ◽  
Strength Characterization ◽  
The Impact

Die fracture strength measurement is important to assess the robustness of a specific silicon die such that it is strong enough to resist die crack. There are several methods used to measure the strength of silicon die and 3-point bend test is the most common. However, the impact of the loading anvil shape on die strength results needs to be investigated. This paper discusses the comparison of die strength characterization using different loading anvil shapes in a 3-point bend test. The anvil shapes considered were wedge shape and needle shape. Die strength calculations were all done using the standard 3-point bend formula for flexural stress. Statistical analysis of the results revealed that die strength measured using wedge shape loading anvil is not significantly different from the strength measured using the needle shape loading anvil. Therefore, using the needle shape loading anvil in a 3-point bend test could still provide die strength results comparable with the results using the standard wedge shape loading anvil.

scholarly journals Investigation on the Flexural Modulus of Silicon Dies to Improve Die Mechanical Modeling Accuracy

2021 ◽  
pp. 57-64
Author(s):  
Jefferson Talledo
Keyword(s):  
Integrated Circuit ◽  
Flexural Modulus ◽  
Back Side ◽  
Mechanical Modeling ◽  
Bulk Silicon ◽  
Significant Difference ◽  
Modeling Accuracy ◽  
The Common ◽  
Point Bend ◽  
Die Deflection

Mechanical modeling of integrated circuit (IC) dies is commonly performed using the mechanical properties of the bulk silicon material. However, modeling results such as die deflection and the actual results were observed to have significant difference. This paper discusses the investigation done on the flexural modulus of actual IC dies used in package assembly manufacturing. Results were then compared with the modulus of the bulk silicon die or mirror die. The measurement of flexural modulus was done using the standard 3-point bend test. It was found out that the flexural modulus of the actual IC die is significantly lower than the flexural modulus of the bulk silicon or dummy die. Even with the actual IC die, the flexural modulus of the active side is also lower than the back side. From this study, it can be concluded that mechanical modeling involving IC dies could be improved by characterizing the properties of the actual die used. The common practice of using the properties of the bulk silicon die in mechanical modeling would not provide accurate results.

scholarly journals Effect of Silicon Die Condition on the Breaking Load Performance of a Dam and Fill Semiconductor Package

2021 ◽  
pp. 64-69
Author(s):  
Jefferson Talledo
Keyword(s):  
Integrated Circuit ◽  
Breaking Load ◽  
Bend Test ◽  
Compound Material ◽  
Point Bend Test ◽  
Point Bend

A semiconductor package has a silicon die on which an integrated circuit (IC) is fabricated. The die is singulated from a single wafer using processes like mechanical sawing or laser grooving. These processes have impact on the final condition of the silicon die after wafer singulation. This paper discusses a study on the effect of the die condition on the breaking load of a package with a dam and fills structure. The encapsulation material of this type of package has lower modulus when compared with the epoxy mold compound material used in most molded packages. The package breaking load was determined using 3-point bend test for two sets of packages. The first set of packages was assembled with silicon die produced using mechanical sawing. The second set was assembled with die produced using laser grooving. Results of the 3-point bend test showed that the breaking load of the package with die from mechanical sawing is higher compared with the package assembled with die from laser grooving. The study revealed that that the silicon die condition has significant effect on the robustness of the final package where the die is used.

Fracture strength characterization of tubular ceramic materials using a simple c-ring geometry

1986 ◽  
Vol 21 (8) ◽  
pp. 2628-2632 ◽  
Author(s):  
M. K. Ferber ◽  
V. J. Tennery ◽  
S. B. Waters ◽  
J. Ogle
Keyword(s):  
Fracture Strength ◽  
Ceramic Materials ◽  
Ring Geometry ◽  
Strength Characterization

Characterization of the Adherence of Metals to Ceramics by a Fracture Mechanics Concept

1984 ◽  
Vol 40 ◽  
Author(s):  
Tadatomo Suga ◽  
Gerhard Elssner
Keyword(s):  
Fracture Mechanics ◽  
Bond Strength ◽  
Fracture Resistance ◽  
Metal Substrate ◽  
Metal Ceramic ◽  
Point Bend Test ◽  
Point Bend ◽  
Plasma Sprayed ◽  
Four Point Bend Test

AbstractThe adherence and the bond strength of metal-to-ceramic joints are described in terms of the fracture energy Gc and the fracture resistance Kc. Small three- or four-point bend test specimens of 30 to 60 mm length notched or precracked at the metal-ceramic interface are used to determine the Gc and Kc data. Examples of bond strength measurements on metal-to-ceramic joints and plasma-sprayed ceramic layer-metal substrate combinations aim to demonstrate the applicability of the method.

Characterization of RF Sputtered ZnO Piezoelectric Films Using Transmission Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 86-87
Author(s):  
Kemining W. Yeh ◽  
Richard S. Muller ◽  
Wei-Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Integrated Circuit ◽  
Acoustic Waves ◽  
New Technology ◽  
Surface Acoustic Waves ◽  
Electromechanical Properties ◽  
Leading Role ◽  
Saw Devices ◽  
Transmission Electron ◽  
High Degree

Considerable and continuing interest has been shown in the thin film transducer fabrication for surface acoustic waves (SAW) in the past few years. Due to the high degree of miniaturization, compatibility with silicon integrated circuit technology, simplicity and ease of design, this new technology has played an important role in the design of new devices for communications and signal processing. Among the commonly used piezoelectric thin films, ZnO generally yields superior electromechanical properties and is expected to play a leading role in the development of SAW devices.

Strength characterization of assemblies of polymers, made by laser welding

2015 ◽  
Vol 103 (5) ◽  
pp. 503
Author(s):  
Vladimir Gantchenko ◽  
Jacques Renard ◽  
Alexander Olowinsky ◽  
Gerhard Otto
Keyword(s):  
Laser Welding ◽  
Strength Characterization

Analisis Karakterisasi Teknologi Direct Sequence Spread Spectrum Dan Frequency Hopping Spread Spectrum

2019 ◽  
Vol 2 (2) ◽  
pp. 129-138
Author(s):  
Fawzan Galib Abdul Karim Bawahab ◽  
Elvan Yuniarti ◽  
Edi Kurniawan
Keyword(s):  
Spread Spectrum ◽  
Communication Systems ◽  
Multiple Access ◽  
Frequency Hopping ◽  
Direct Sequence Spread Spectrum ◽  
Direct Sequence ◽  
Frequency Hopping Spread Spectrum ◽  
Two Systems ◽  
The Difference

Abstrak. Pada penelitian ini, telah dilakukan analisa karakterisasi pada teknologi Direct Sequence Spread Spectrum dan Frequency Hopping Spread Spectrum, sebagai salah satu teknik multiple-access pada sistem komunikasi. Karakterisasi dilakukan untuk mencari bagaimana cara meningkatkan keoptimalan kedua sistem tersebut, dalam mengatasi masalah interferensi dengan sistem dan channel yang sama. Dan juga untuk menentukan veriabel apa yang mempengaruhi keoptimalan kedua sistem tersebut. Karakterisasi dilakukan dengan menentukan variabel-variabel yang mempengaruhi keoptimalan keduanya. Hasil dari karakterisasi, diketahui variabel-variabel yang mempengaruhi kemampuan sistem DSSS yaitu nilai frekuensi spreading (). Sedangkan untuk sistem FHSS yaitu nilai frekuensi spreading ( dan ) dan selisih antara frekuensi hopping data dengan frekuensi hopping interferensi . Kata Kunci: BER, DSSS, FHSS, Interference, Spread spectrum. Abstract. In this study, characterization of Direct Sequence Spread Spectrum and Frequency Hopping Spread Spectrum technologies have been done, as one of the multiple-access techniques in communication systems. Characterization is done to find out how to improve the ability of the two systems, in solving interference problems with the same system and channel. And also to determine what veriabel affects the ability of the two systems. Characterization is done by determining the variables that affect the ability of both. The results of the characterization, known variables that affect the ability of the DSSS system are the spreading frequency value (). As for the FHSS system, the spreading frequency value ( and ) and the difference between frequency hopping data with frequency hopping interference .

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