Polarization stability of the single-mode laser diodes radiation applied in radiation scattering study complexes

Key features of semiconductor lasers and its serially manufacturing technology modernization have greatly expanded of its using at applied studies at last 20 years. But there is set of factors restricting such lasers application in a number of optical-electronic measuring complexes. Particularly in particle image velocimetry (PIV) and laser Doppler velocimetry (LDV) complexes commonly the gas and solid-state lasers is used due to more stability of spectral, energy and polarization characteristics of radiation then semiconductor lasers have. However gradual introduction of the serially manufacturing laser diodes into such systems picking up the pace that certainly characterizes the progress of reaching the required stability of its output laser radiation parameters. In laser measurement systems where medium investigation carried out by analyzing of scattering radiation in it the probe radiation polarization is often important. So the using in such systems the laser diodes as sources of radiation need to be followed by stability monitoring of its polarization characteristics which may be violated both by the outer factors and by natural degradation of inner laser diode structure. This work is devoted to the issues of monitoring the radiation polarization characteristics of the serially manufacturing single-mode laser diodes.

Fabrication of Anisotropic Structures on the Surface of Amorphous Silicon by Femtosecond Laser Pulses

Anisotropic periodic relief in form of ripples was formed on surface of amorphous hydrogenated silicon (a-Si:H) films by femtosecond laser pulses with the wavelength of 1.25 μm. The orientation of the surface structures relative to laser radiation polarization vector depended on the number of laser pulses N acting on the film surface. When N = 30, the structures with 0.88 μm period were formed orthogonal to the laser radiation polarization; at N = 750 the surface structures had period of 1.12 μm and direction parallel to the polarization. The conductivity of the laser-modified a-Si:H films increased by 3 to 4 orders of magnitude, up to 3.8·10–5 (Ω∙cm)–1, due to formation of nanocrystalline Si phase with a volume fraction from 17 to 30%. Anisotropy of the dark conductivity, as well as anisotropy of the photoconductivity spectral dependences was observed in the modified films due to depolarizing influence of periodic microscale relief and uneven distribution of nanocrystalline Si phase within such laser-induced structure.