Localized Surface Plasmon Fields Manipulation on Nanostructures Using Wavelength Shifting

Metallic nanowires have been utilized as a platform for propagating surface plasmon (SPs) fields. To be exploited for applications such as plasmonic circuits, manipulation of localized field propagating pattern is also important. In this study, we calculated the field distributions of localized surface plasmons (LSPs) on the specifically shaped nanostructures and explored the feasibility of manipulating LSP fields. Specifically, plasmonic fields were calculated at different wavelengths for a nanoscale rod array (I-shaped), an array connected with two nanoscale rods at right angles (T-shaped), and an array with three nanoscale rods at 120° to each other (Y-shaped). Three different types of nanostructures are suggested to manipulate the positions of LSP fields collaborating with adjustment of wavelength, polarization, and incident orientation of light source. The results of this study are important not only for the understanding of the wavelength-dependent surface plasmon field localization mechanism but also for the applicability of swept source-based plasmonic techniques or designing a plasmonic circuit.

Fluorescence Enhancement via Dual Coupling of Dye Molecules with Silver Nanostructures

We demonstrate the enhancement of fluorescence emitted from dye molecules coupled with two surface plasmons, i.e., silver nanoparticles (AgNPs)-induced localized surface plasmons (LSP) and thin silver (Ag) film supported surface plasmons. Excitation light is illuminated to a SiO2 layer that contains both rhodamine 110 molecules and AgNPs. AgNPs enhances excitation rates of dye molecules in their close proximity due to LSP-induced enhancement of local electromagnetic fields at dye excitation wavelengths. Moreover, the SiO2 layer on one surface of which a 50 nm-thick Ag film is coated for metal cladding (air on the other surface), acts as a waveguide core at the dye emission wavelengths. The Ag film induces the surface plasmons which couple with the waveguide modes, resulting in a waveguide-modulated version of surface plasmon coupled emission (SPCE) for different SiO2 thicknesses in a reverse Kretschmann configuration. We find that varying the SiO2 thickness modulates the fluorescent signal of SPCE, its modulation behavior being in agreement with the theoretical simulation of thickness dependent properties of the coupled plasmon waveguide resonance. This enables optimization engineering of the waveguide structure for enhancement of fluorescent signals. The combination of LSP enhanced dye excitation and the waveguide-modulated version of SPCE may offer chances of enhancing fluorescent signals for a highly sensitive fluorescent assay of biomedical and chemical substances.

Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons

Metal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material technologies still remains challenging. We demonstrate localized surface plasmons in self-assembled, hemispherical CdZnO metal-oxide nanoparticles on GaAs, as a route to enhance the absorption in mid-infrared photodetectors. In this system, two localized surface plasmon modes are identified at 5.3 and 2.7 μm, which yield an enhancement of the light intensity in the underlying GaAs. In the case of the long-wavelength mode the enhancement is as large as 100 near the interface, and persists at depths down to 50 nm. We show numerically that both modes can be coupled to infrared intersubband transitions in GaAs-based multiple quantum wells, yielding an absorbed power gain as high as 5.5, and allowing light absorption at normal incidence. Experimentally, we demonstrate this coupling in a nanoparticle/multiple quantum well structure, where under p-polarization the intersubband absorption is enhanced by a factor of 2.5 and is still observed under s-polarization, forbidden by the usual absorption selection rules. Thus, the integration of CdZnO on GaAs can help improve the figures of merit of quantum well infrared photodetectors, concept that can be extended to other midinfrared detector technologies.