Investigation of the parameters of a single photon detector for quantum communication

Nowadays the best single photon detectors from a practical view are those based on InGaAs/InP avalanche photodiodes, operating at a wavelength of 1.55 μm. The dependence of quantum efficiency and noise levels on the temperature and bias voltage of avalanche photodiodes were carried out.

First-in-clinical application of a time-gated diffuse correlation spectroscopy system at 1064nm using superconducting nanowire single photon detectors

Recently proposed time-gated DCS (TG-DCS) has significant advantages compared to conventional CW-DCS, but it is still in an early stage and clinical capability has yet to be established. The main challenge for TG-DCS is the lower SNR when gating for the deeper travelling late photons. Longer wavelengths, such as 1064nm have a smaller effective attenuation coefficient and a higher power threshold in humans, which significantly increases the SNR. Here, we demonstrate the clinical utility of TG-DCS at 1064 nm in a case study on a patient with severe traumatic brain injury admitted to the neuroscience intensive care unit (NSICU). We showed a significant correlation between TG-DCS early (ρ = 0.67) and late (ρ = 0.76) gated against invasive thermal diffusion flowmetry. We also analyzed TG-DCS at high temporal resolution (50 Hz) to elucidate pulsatile flow data. Overall, this study demonstrates the first clinical translation capability of the TG-DCS system at 1064nm using superconducting nanowire single photon detector.

Ge-on-Si single-photon avalanche diode detectors for short-wave infrared wavelengths

Germanium-on-Silicon (Ge-on-Si) based single-photon avalanche diodes (SPADs) have recently emerged as a promising detector candidate for ultra-sensitive and picosecond resolution timing measurement of short-wave infrared (SWIR) photons. Many applications benefit from operating in the SWIR spectral range, such as long distance Light Detection and Ranging (LiDAR), however, there are few single-photon detectors exhibiting the high-performance levels obtained by all-silicon SPADs commonly used for single-photon detection at wavelengths < 1 μm. This paper first details the advantages of operating at SWIR wavelengths, the current technologies, and associated issues, and describes the potential of Ge-on-Si SPADs as a single-photon detector technology for this wavelength region. The working principles, fabrication and characterisation processes of such devices are subsequently detailed. We review the research in these single-photon detectors and detail the state-of-the-art performance. Finally, the challenges and future opportunities offered by Ge-on-Si SPAD detectors are discussed.