Влияние подслоя Ba-=SUB=-0.2-=/SUB=-Sr-=SUB=-0.8-=/SUB=-TiО-=SUB=-3-=/SUB=- на структуру и электрофизические характеристики пленок цирконата-титаната свинца на подложке Si(001)

Pb(ZrTi)O3/Ba0.2Sr0.8TiО3/Si(001) metal-ferroelectric-semiconductor hetero-structures were fabricated by radio-frequency cathodic sputtering. It was found that Pb(ZrTi)O3 films are single-phase, textured, and Ba0.2Sr0.8TiО3 sublayer thickness in-fluence on the texture preferred orientation (110 or 001). It has been shown that by varying the sublayer thickness and / or the amplitude of one period of the applied ex-ternal bipolar electric field, it is possible to create different electrophysical states of the structure. These electrophysical states can be used in creating of the memory cells and, in particular, a multi-level memory cells.