Evidence of weak Anderson localization revealed by the resistivity, transverse magnetoresistance and Hall effect measured on thin Cu films deposited on mica

We report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K < T < 50 K. The mean grain diameters are D = (8.9, 9.8, 20.2, 31.5, 34.7) nm, respectively. The magnetoresistance signal is positive in samples where D > L/2 (where L = 39 nm is the electron mean free path in the bulk at room temperature), and negative in samples where D < L/2. The sample where D = 20.2 nm exhibits a negative magnetoresistance at B < 2 Tesla and a positive magnetoresistance at B > 3 Tesla. A negative magnetoresistance in Cu films has been considered evidence of charge transport involving weak Anderson localization. These experiments reveal that electron scattering by disordered grain boundaries found along L leads to weak Anderson localization, confirming the localization phenomenon predicted by the quantum theory of resistivity of nanometric metallic connectors. Anderson localization becomes a severe obstacle for the successful development of the circuit miniaturization effort pursued by the electronic industry, for it leads to a steep rise in the resistivity of nanometric metallic connectors with decreasing wire dimensions (D < L/2) employed in the design of Integrated Circuits.

Transverse magnetoresistance, Hall mobility and Hall constant of thin Cu films deposited onto cleaved mica: Evidence of weak Anderson localization.

We report the resistivity of 5 Cu films approximately 65 nm thick, measured between 5 K and 290 K, and the transverse magnetoresistance and Hall effect measured at temperatures 5 K< T<50 K. The mean grain diameters are D=(8.9, 9.8, 20.2, 31.5, 34.7) nm, respectively. The magnetoresistance signal is positive in samples where D>L/2 (where L=39 nm is the electron mean free path in the bulk at room temperature), and negative in samples where D<L/2. The sample where D=20.2 nm exhibits a negative magnetoresistance at B < 2 Tesla and a positive magnetoresistance at B > 2 Tesla. A negative magnetoresistance in Cu films has been considered evidence of charge transport involving weak Anderson localization. These experiments reveal that electron scattering by disordered grain boundaries found along L leads to weak Anderson localization, confirming the localization phenomena predicted by the quantum theory of resistivity of nanometric metallic connectors. Anderson localization becomes a severe obstacle for the successful development of the circuit miniaturization effort pursued by the electronic industry, for it leads to a steep rise in the resistivity of nanometric metallic connector with decreasing wire dimensions (D<L/2) employed in the design of Integrated Circuits.

LARGE VALUES OF THE TRANSVERSE M UES OF THE TRANSVERSE MAGNETIC RESISTANCEOF SINGLE CRYSTAL NICKEL FILMS

Background. The anisotropy of the transverse magnetoresistance of single-crystal nickel films was studied in this work. The measurements were carried out on samples whose surface plane coincided with the [001] plane. Studies of the magnetoresistance in a single-crystal nickel film have shown the effect of tensile stresses acting on it from the side of magnesium oxide. The modification of the anisotropy of magnetoreflection of a film on a substrate as compared to a free sample is apparently associated with a change in the shape of the Fermi surface of carriers.

Large values of transverse magnetic reduction of nickel single crystal films

In this work we studied the anisotropy of the transverse magnetoresistance of single-crystal nickel films. The measurements were carried out on samples whose surface plane coincided with the [001] cavity. Studies of magnetoresistance in a monocrystalline nickel film showed tensile stresses acting on it from the side of magnesium oxide. The modification of the magnetization anisatropy of the film on the substrates as compared with the free sample is apparently associated with a change in the shape of the Fermi surface of the carriers.