Investigation of the magnetoresistivity in compositional superlattices under the influence of an intense electromagnetic wave

The magnetoresistivity (MR) is theoretically calculated in a compositional semiconductor superlattice (CSSL), subjected to a crossed DC electric field and magnetic field, in the presence of an intense electromagnetic wave (EMW). The magnetic field is oriented along the growth direction of the CSSL and the electron–acoustic phonon interaction is taken into account at low temperature. Numerical results for the GaN/AlGaN CSSL show the Shubnikov–de Haas (SdH) oscillations in the MR whose period does not depend on the temperature and amplitude decreases with increasing temperature. The temperature dependence of the relative amplitude of these oscillations is in good agreement with other theories and experiments in some two-dimensional (2D) electron systems. The influence of the EMW as well as superlattice structure on the MR is discussed and compared with available theoretical and experimental results.

Hall Effect on the Doped Semiconductor Superlattice with an In-plane Magnetic Field Under Influence of an Intense Electromagnetic Wave

The Hall effect is studied theoretically in a doped semiconductor superlattice (DSSL) subjected to a crossed dc electric field and magnetic field in the presence of an intense electromagnetic wave (EMW). By using the quantum kinetic equation for electrons interacting with acoustic phonons at low temperature, we obtain expressions for the magnetoresistance as well as the Hall coefficient in dependence on the external fields and characteristic parameters of the DSSL. Analytical results are numerically evaluated for the GaAs:Si/GaAs:Be DSSL. The dependence of the magnetoresistance on the magnetic field is consistent with the result obtained for some two-dimensional electron systems. The Hall coefficient depends weakly on the magnetic field and its value in the presence of the EMW is smaller than that of the case without EMW.