Study of the heavily p-type doping of cubic GaN with Mg

We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be used in bipolar devices. We simulated the Mg-doped GaN transport properties by density functional theory (DFT) to compare with the experimental data. Mg-doped GaN cubic epitaxial layers grown under optimized conditions show a free hole carrier concentration with a maximum value of 6 × 1019 cm−3 and mobility of 3 cm2/Vs. Deep level transient spectroscopy shows the presence of a trap with an activation energy of 114 meV presumably associated with nitrogen vacancies, which could be the cause for the observed self-compensation behavior in heavily Mg-doped GaN involving Mg-VN complexes. Furthermore, valence band analysis by X-ray photoelectron spectroscopy and photoluminescence spectroscopy revealed an Mg ionization energy of about 100 meV, which agrees quite well with the value of 99.6 meV obtained by DFT. Our results show that the cubic phase is a suitable alternative to generate a high free hole carrier concentration for GaN.

Synthesis and Low Temperature Physical Properties of Metal Substituted CoSr2YCu2Oy.

ABSTRACTIn the present study, hole carrier doping was attempted for CoSr2YCu2O7+δ which is a relating compound to a well known superconductor YBa2Cu3O7-δ by introduction of excess oxygen into CoO1+δ layer and cation substitutions. High valence metal substitution for cobalt and barium substitution for strontium were revealed to be able to introduce excess oxygen and generate hole carriers. Additional calcium substitution for yttrium enhanced hole carrier concentration p/Cu > 0.05 which was enough for superconductivity, however superconducting transition was not observed. This is possibly due to incorporation of cobalt in the CuO2 planes.