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High-Voltage Breakdown and the Gunn Effect in GaAs/AlGaAs Nanoconstrictions

2015 ◽  
Vol 14 (3) ◽  
pp. 524-530 ◽  
Author(s):  
Rui Chen ◽  
Weilu Gao ◽  
Xuan Wang ◽  
Gregory R. Aizin ◽  
John Mikalopas ◽  
...  
Keyword(s):  
High Voltage ◽  
High Voltage Breakdown ◽  
Gunn Effect ◽  
Voltage Breakdown

Structural Dependences of Gunn Oscillations in a Planar Nano-Device

2014 ◽  
Vol 618 ◽  
pp. 39-42
Author(s):  
Kun Yuan Xu ◽  
Ya Nan Wang ◽  
Zuo Nian Wang
Keyword(s):  
Monte Carlo ◽  
Threshold Voltage ◽  
Channel Width ◽  
Two Dimensional ◽  
Device Structure ◽  
Ensemble Monte Carlo ◽  
Domain Evolution ◽  
Current Oscillations ◽  
Gunn Effect ◽  
The Asymmetry

Gunn oscillations in a GaAs-based planar nanodevice are studied using a two-dimensional ensemble Monte Carlo (EMC) method. Current oscillations with a frequency of about 0.1 THz have been observed. The current oscillations are accompanied by electron domain evolution along the nanochannel. As such, they can be attributed to Gunn Effect. Further study shows that the Gunn oscillations are not only bias-dependent, but also structural-dependent. The threshold voltage and the amplitude of the oscillations are both related to the channel width and the asymmetry of the device structure.

Gunn Effect in n-InP MOSFET at positive gate bias and impact ionization conditions

2014 ◽  
Author(s):  
V. Gruzinskis ◽  
E. Starikov ◽  
P. Shiktorov ◽  
H. Marinchio ◽  
J. Torres ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Gate Bias ◽  
Gunn Effect

Phase locking of nanosecond Gunn-effect oscillators

2011 ◽  
Vol 54 (6) ◽  
pp. 781-784 ◽  
Author(s):  
V. Yu. Konev ◽  
V. P. Gubanov ◽  
A. I. Klimov ◽  
O. B. Koval’chuk ◽  
V. V. Rostov ◽  
...  
Keyword(s):  
Phase Locking ◽  
Gunn Effect
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