Monte Carlo simulation of THz frequency range Gunn effect in InP MOSFET at impact ionization conditions

Mapping Intimacies ◽

10.1063/1.4848447 ◽

2013 ◽

Author(s):

S. Asmontas ◽

V. Gružinskis ◽

P. Shiktorov ◽

E. Starikov

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Frequency Range ◽

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Monte Carlo simulation of THz frequency Gunn effect in GaAs MOSFET with excess of electrons in channel at impact ionization conditions

Lithuanian Journal of Physics ◽

10.3952/physics.v54i1.2836 ◽

2014 ◽

Vol 54 (1) ◽

pp. 7-10 ◽

Author(s):

Viktoras Gružinskis ◽

Evgenij Starikov ◽

Pavel Shiktorov

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

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Monte Carlo Simulation of Temperature- and Field-dependent Impact Ionization for GaAs

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_70 ◽

2001 ◽

pp. 162-163

Author(s):

H. K. Jung ◽

S. W. Ko ◽

C. K. You ◽

K. Taniguchi

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Field Dependent

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Classical Trajectory Monte Carlo simulation of coincidence experiments in electron impact ionization of helium

The European Physical Journal D ◽

10.1140/epjd/e2019-90629-7 ◽

2019 ◽

Vol 73 (4) ◽

Author(s):

Károly Tökési ◽

Béla Paripás ◽

Endre Kovács

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Impact ◽

Impact Ionization ◽

Electron Impact Ionization ◽

Classical Trajectory ◽

Classical Trajectory Monte Carlo

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Inverse modeling of impact ionization rate through comparison of Monte Carlo simulation of Si metal‐oxide‐semiconductor device characteristics and experimental results

Journal of Applied Physics ◽

10.1063/1.354157 ◽

1993 ◽

Vol 74 (9) ◽

pp. 5859-5866 ◽

Author(s):

Syunji Imanaga ◽

Kunio Hane ◽

Yoshinori Hayafuji

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Metal Oxide ◽

Inverse Modeling ◽

Impact Ionization ◽

Semiconductor Device ◽

Ionization Rate ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Impact Ionization Rate

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Full band Monte Carlo simulation of zincblende GaN MESFET's including realistic impact ionization rates

IEEE Transactions on Electron Devices ◽

10.1109/16.772471 ◽

1999 ◽

Vol 46 (7) ◽

pp. 1319-1325 ◽

Author(s):

M. Farahmand ◽

K.F. Brennan

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Full Band ◽

Ionization Rates

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Monte Carlo simulation of impact-ionization-induced breakdown and current filamentation in δ-doped GaAs

Physical Review B ◽

10.1103/physrevb.51.7725 ◽

1995 ◽

Vol 51 (12) ◽

pp. 7725-7733 ◽

Author(s):

B. Kehrer ◽

W. Quade ◽

E. Schöll

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization

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Impact Ionization for Electrons in Si with Monte Carlo Simulation

Granular Nanoelectronics - NATO ASI Series ◽

10.1007/978-1-4899-3689-9_39 ◽

1991 ◽

pp. 527-530 ◽

Author(s):

R. Thoma ◽

H. J. Peifer ◽

W. L. Engl ◽

W. Quade ◽

R. Brunetti ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization

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Electron impact ionization and dielectric breakdown in the liquid noble gases: a Monte Carlo simulation

ICDL'96. 12th International Conference on Conduction and Breakdown in Dielectric Liquids ◽

10.1109/icdl.1996.565519 ◽

2002 ◽

Author(s):

H.M. Jones ◽

E.E. Kunhardt

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Impact ◽

Noble Gases ◽

Impact Ionization ◽

Dielectric Breakdown ◽

Electron Impact Ionization

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Monte Carlo simulation of impact ionization in GaAs including quantum effects

Applied Physics Letters ◽

10.1063/1.93732 ◽

1983 ◽

Vol 42 (1) ◽

pp. 76-78 ◽

Author(s):

Yia‐Chung Chang ◽

D. Z. ‐Y. Ting ◽

J. Y. Tang ◽

K. Hess

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Quantum Effects

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Impact ionization model for full band Monte Carlo simulation

Journal of Applied Physics ◽

10.1063/1.356112 ◽

1994 ◽

Vol 75 (7) ◽

pp. 3500-3506 ◽

Author(s):

Y. Kamakura ◽

H. Mizuno ◽

M. Yamaji ◽

M. Morifuji ◽

K. Taniguchi ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Impact Ionization ◽

Full Band ◽

Ionization Model

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