Conductivity and Memristive Behavior of Completely Charged Domain Walls in Reduced Bidomain Lithium Niobate

Author(s):  
Ilya V. Kubasov ◽  
Aleksandr M. Kislyuk ◽  
Tatiana S. Ilina ◽  
Andrey S. Shportenko ◽  
Dmitry A. Kiselev ◽  
...  

Among many materials considered for use in domain-wall nanoelectronics, lithium niobate (LiNbO3, LN) is one of the most technological and physically stable. Compared with many other reports where inclined domain...

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 804
Author(s):  
Thomas Kämpfe ◽  
Bo Wang ◽  
Alexander Haußmann ◽  
Long-Qing Chen ◽  
Lukas M. Eng

Ferroelectric domain wall conductance is a rapidly growing field. Thin-film lithium niobate, as in lithium niobate on insulators (LNOI), appears to be an ideal template, which is tuned by the inclination of the domain wall. Thus, the precise tuning of domain wall inclination with the applied voltage can be used in non-volatile memories, which store more than binary information. In this study, we present the realization of this concept for non-volatile memories. We obtain remarkably stable set voltages by the ferroelectric nature of the device as well as a very large increase in the conduction, by at least five orders of magnitude at room temperature. Furthermore, the device conductance can be reproducibly tuned over at least two orders of magnitude. The observed domain wall (DW) conductance tunability by the applied voltage can be correlated with phase-field simulated DW inclination evolution upon poling. Furthermore, evidence for polaron-based conduction is given.


Author(s):  
J.N. Chapman ◽  
P.E. Batson ◽  
E.M. Waddell ◽  
R.P. Ferrier

By far the most commonly used mode of Lorentz microscopy in the examination of ferromagnetic thin films is the Fresnel or defocus mode. Use of this mode in the conventional transmission electron microscope (CTEM) is straightforward and immediately reveals the existence of all domain walls present. However, if such quantitative information as the domain wall profile is required, the technique suffers from several disadvantages. These include the inability to directly observe fine image detail on the viewing screen because of the stringent illumination coherence requirements, the difficulty of accurately translating part of a photographic plate into quantitative electron intensity data, and, perhaps most severe, the difficulty of interpreting this data. One solution to the first-named problem is to use a CTEM equipped with a field emission gun (FEG) (Inoue, Harada and Yamamoto 1977) whilst a second is to use the equivalent mode of image formation in a scanning transmission electron microscope (STEM) (Chapman, Batson, Waddell, Ferrier and Craven 1977), a technique which largely overcomes the second-named problem as well.


Author(s):  
Wenwu Cao

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. Ghara ◽  
K. Geirhos ◽  
L. Kuerten ◽  
P. Lunkenheimer ◽  
V. Tsurkan ◽  
...  

AbstractAtomically sharp domain walls in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive domain walls have been exclusively observed in oxides, where domain wall mobility and conductivity is largely influenced by stoichiometry and defects. Here, we report on giant conductivity of domain walls in the non-oxide ferroelectric GaV4S8. We observe conductive domain walls forming in zig-zagging structures, that are composed of head-to-head and tail-to-tail domain wall segments alternating on the nanoscale. Remarkably, both types of segments possess high conductivity, unimaginable in oxide ferroelectrics. These effectively 2D domain walls, dominating the 3D conductance, can be mobilized by magnetic fields, triggering abrupt conductance changes as large as eight orders of magnitude. These unique properties demonstrate that non-oxide ferroelectrics can be the source of novel phenomena beyond the realm of oxide electronics.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Łukasz Frąckowiak ◽  
Feliks Stobiecki ◽  
Gabriel David Chaves-O’Flynn ◽  
Maciej Urbaniak ◽  
Marek Schmidt ◽  
...  

AbstractRecent results showed that the ferrimagnetic compensation point and other characteristic features of Tb/Co ferrimagnetic multilayers can be tailored by He+ ion bombardment. With appropriate choices of the He+ ion dose, we prepared two types of lattices composed of squares with either Tb or Co domination. The magnetization reversal of the first lattice is similar to that seen in ferromagnetic heterostructures consisting of areas with different switching fields. However, in the second lattice, the creation of domains without accompanying domain walls is possible. These domain patterns are particularly stable because they simultaneously lower the demagnetizing energy and the energy associated with the presence of domain walls (exchange and anisotropy). For both lattices, studies of magnetization reversal show that this process takes place by the propagation of the domain walls. If they are not present at the onset, the reversal starts from the nucleation of reversed domains and it is followed by domain wall propagation. The magnetization reversal process does not depend significantly on the relative sign of the effective magnetization in areas separated by domain walls.


2021 ◽  
Vol 2021 (3) ◽  
Author(s):  
Diego Delmastro ◽  
Jaume Gomis

Abstract 4d$$ \mathcal{N} $$ N = 1 super Yang-Mills (SYM) with simply connected gauge group G has h gapped vacua arising from the spontaneously broken discrete R-symmetry, where h is the dual Coxeter number of G. Therefore, the theory admits stable domain walls interpolating between any two vacua, but it is a nonperturbative problem to determine the low energy theory on the domain wall. We put forward an explicit answer to this question for all the domain walls for G = SU(N), Sp(N), Spin(N) and G2, and for the minimal domain wall connecting neighboring vacua for arbitrary G. We propose that the domain wall theories support specific nontrivial topological quantum field theories (TQFTs), which include the Chern-Simons theory proposed long ago by Acharya-Vafa for SU(N). We provide nontrivial evidence for our proposals by exactly matching renormalization group invariant partition functions twisted by global symmetries of SYM computed in the ultraviolet with those computed in our proposed infrared TQFTs. A crucial element in this matching is constructing the Hilbert space of spin TQFTs, that is, theories that depend on the spin structure of spacetime and admit fermionic states — a subject we delve into in some detail.


2004 ◽  
Vol 69 (6) ◽  
Author(s):  
Terrence Jach ◽  
Sungwon Kim ◽  
Venkatraman Gopalan ◽  
Stephen Durbin ◽  
David Bright

Author(s):  
Lyudmila Kokhanchik ◽  
Evgenii Emelin ◽  
Vadim Vladimirovch Sirotkin ◽  
Alexander Svintsov

Abstract The focus of the study was to investigate the peculiarities of the domains created by electron beam (e-beam) in a surface layer of congruent lithium niobate, which comparable to a depth of electron beam charge penetration. Direct e-beam writing (DEBW) of different domain structures with a scanning electron microscope was performed on the polar -Z cut. Accelerating voltage 15 kV and e-beam current 100 pA were applied. Different patterns of local irradiated squares were used to create domain structures and single domains. No domain contrast was observed by the PFM technique. Based on chemical etching, it was found that the vertices of the domains created do not reach the surface level. The average deepening of the domain vertices was several hundred nanometers and varied depending on the irradiation dose and the location of the irradiated areas (squares) relative to each other. Computer simulation was applied to analyze the spatial distribution of the electric field in the various irradiated patterns. The deepening was explained by the fact that in the near-surface layer there is a sign inversion of the normal component of the electric field strength vector, which controls the domain formation during DEBW. Thus, with the help of e-beam, domains were created completely located in the bulk, in contrast to the domains that are nucleated on the surface of the -Z cut during the polarization inversion with AFM tip. The detected deepening of e-beam domains suggests the possibility of creating the “head-to-head” domain walls in the near-surface layer lithium niobate by DEBW.


2015 ◽  
Vol 233-234 ◽  
pp. 55-59
Author(s):  
Marina Kirman ◽  
Artem Talantsev ◽  
Roman Morgunov

The magnetization dynamics of metal-organic crystals has been studied in low frequency AC magnetic field. Four modes of domain wall motion (Debye relaxation, creep, slide and over - barrier motion (switching)) were distinguished in [MnII(H(R/S)-pn)(H2O)] [MnIII(CN)6]⋅2H2O crystals. Debye relaxation and creep of the domain walls are sensitive to Peierls relief configuration controlled by crystal lattice chirality. Structural defects and periodical Peierls potential compete in the damping of the domain walls. Driving factor of this competition is ratio of the domain wall width to the crystal lattice parameter.


2018 ◽  
Vol 124 (19) ◽  
pp. 193902 ◽  
Author(s):  
H.-K. Hwang ◽  
J. Kwon ◽  
K.-S. Lee ◽  
J.-I. Hong ◽  
C.-Y. You

Sign in / Sign up

Export Citation Format

Share Document