Quasiatomic layer etching of silicon oxide selective to silicon nitride in topographic structures using fluorocarbon plasmas

2017 ◽  
Vol 35 (3) ◽  
pp. 031301 ◽  
Author(s):  
Mingmei Wang ◽  
Peter L. G. Ventzek ◽  
Alok Ranjan
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Fluorocarbon Plasmas

scholarly journals A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

2017 ◽  
Vol 124 ◽  
pp. 288-294 ◽  
Author(s):  
Barbora Mojrová ◽  
Haifeng Chu ◽  
Christop Peter ◽  
Pirmin Preis ◽  
Jan Lossen ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Comparison Study

Changes in the optical properties of films of silicon nitride, silicon oxinitride, and silicon oxide upon ion irradiation

1977 ◽  
Vol 26 (1) ◽  
pp. 129-131
Author(s):  
N. N. Gerasimenko ◽  
T. I. Kovalevskaya ◽  
V. G. Pan'kin ◽  
K. K. Svitashev ◽  
G. M. Tseitlin
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Silicon Oxide ◽  
Ion Irradiation

Synthesis of coaxial nanowires of silicon nitride sheathed with silicon and silicon oxide

2000 ◽  
Vol 115 (12) ◽  
pp. 683-686 ◽  
Author(s):  
X.C Wu ◽  
W.H Song ◽  
B Zhao ◽  
W.D Huang ◽  
M.H Pu ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide

Wear and Nanomechanical Studies of Silicon Oxide and Silicon Nitride Thin Films for MEMS Applications

1998 ◽  
pp. 579-589 ◽  
Author(s):  
Z. Rymuza ◽  
Z. Kusznierewicz ◽  
M. Misiak ◽  
K. Schmidt-Szałowski ◽  
Z. Rżanek-Boroch ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Oxide

Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach

2018 ◽  
Vol 282 ◽  
pp. 152-157 ◽  
Author(s):  
Hu Shan Cui ◽  
Kai Hua Cao ◽  
You Guang Zhang ◽  
Hua Gang Xiong ◽  
Jia Qi Wei ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Magnesium Oxide ◽  
Building Block ◽  
Silicon Oxide ◽  
Process Integration ◽  
Electrical Contact ◽  
Device Fabrication ◽  
Integration Scheme ◽  
Ferromagnetic Metals ◽  
Wet Etch

In this work, a novel process integration scheme for p-MTJ devices’ passivation and contacting was proposed. The method can efficiently protect the ferromagnetic metals and the magnesium oxide which are the key building block of p-MTJs, and effectively make electrical contact with the interconnect metals for p-MTJs. The scheme consists of passivation of p-MTJs with dual dielectrics - silicon nitride and silicon oxide, followed by planarization and selective wet etch. The proposed integration scheme was successfully demonstrated with 80 nm size p-MTJ devices.

Analysis of silicon–oxide–silicon nitride stacks by medium-energy ion scattering

2000 ◽  
Vol 18 (5) ◽  
pp. 2503 ◽  
Author(s):  
D. Landheer ◽  
P. Ma ◽  
W. N. Lennard ◽  
I. V. Mitchell ◽  
C. McNorgan
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering
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