<div>The exploration of photoanode materials with high efficiency and stability is the </div><div>eternal pursuit for the realization of practically solar-driven photoelectrochemical </div><div>water splitting. Here we develop a novel deficient ternary metal sulfide (CdIn2S4) </div><div>as photoanode, and its PEC performance is significantly enhanced by introducing </div><div>surface S vacancies, achieving a photocurrent density of 5.73 mA cm-2 at 1.23 V vs. </div><div>RHE and 1 Sun and an applied bias photon-to-current efficiency of 2.49% at 0.477 </div><div>V vs. RHE, which, to the best of our knowledge, are the record-high values for a </div><div>single sulfide photon absorber to date. The experimental characterizations and </div><div>theoretical calculations highlight the enhanced effect of surface S vacancies on the </div><div>interfacial charge separation and transfer kinetics, and also demonstrate the </div><div>restrained surface states distribution and the transformation of active sites after </div><div>introducing surface S vacancies. This work may inspire more excellent work on </div><div>developing sulfide-based photoanodes. </div>