strongly correlated electronic systems
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2018 ◽  
Vol 32 (29) ◽  
pp. 1850327
Author(s):  
Nguen Dan Tung ◽  
Nikolay Plakida

We consider the dynamic charge susceptibility and the charge density waves in strongly-correlated electronic systems within the two-dimensional t-J-V model. Using the equation of motion method for the relaxation functions in terms of the Hubbard operators, we calculate the static susceptibility and the spectrum of charge fluctuations as functions of doped hole concentrations and temperature. Charge density waves emerge for a sufficiently strong intersite Coulomb interaction. Calculation of the dynamic charge susceptibility reveals a strong damping of charge density waves for a small hole doping and propagating high-energy charge excitations at large doping.


2012 ◽  
Vol 26 (20) ◽  
pp. 1250130 ◽  
Author(s):  
L. MAROTTA ◽  
F. SIRINGO

The Gaussian Effective Potential (GEP) is shown to be a useful variational tool for the study of the magnetic properties of strongly correlated electronic systems. The GEP is derived for a single band Hubbard model on a two-dimensional bi-partite square lattice in the strong coupling regime. At half-filling the antiferromagnetic order parameter emerges as the minimum of the effective potential with an accuracy which improves over RPA calculations and is very close to that achieved by Monte Carlo simulations. Extensions to other magnetic systems are discussed.


2011 ◽  
Vol 25 (25) ◽  
pp. 1983-1992 ◽  
Author(s):  
ORION CIFTJA ◽  
NICOLE OCKLEBERRY ◽  
CHIKO OKOLO

The most robust fractional quantum Hall states occur in the lowest Landau level at filling factors, 1/3 and 1/5. Such states are very well described by Laughlin's wave function. In this work, we have succeeded in calculating exactly the one-particle density function of the Laughlin states for some finite systems of particles in a disk geometry. The exact results we provide are not only important for the Laughlin states, but also for the general field of numerical calculations because they can serve as benchmarks to test the accuracy of various approaches, numerical schemes and computational methods used in studies of strongly correlated electronic systems.


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