Phonon-Assisted Tunneling Current in a Double-Barrier Heterostructure with a Quantum Well

Author(s):  
Ljudmila Yu. Shchurova ◽  
Vladimir N. Murzin
2015 ◽  
Vol 115 (15) ◽  
Author(s):  
B. S. Tao ◽  
H. X. Yang ◽  
Y. L. Zuo ◽  
X. Devaux ◽  
G. Lengaigne ◽  
...  

2005 ◽  
Vol 86 (20) ◽  
pp. 203501 ◽  
Author(s):  
Y. M. Cui ◽  
L. W. Zhang ◽  
C. C. Wang ◽  
G. L. Xie ◽  
C. P. Chen ◽  
...  

1993 ◽  
Vol 03 (C5) ◽  
pp. 225-228
Author(s):  
B. CHASTAINGT ◽  
G. NEU ◽  
C. DEPARIS ◽  
J. MASSIES ◽  
J. MARTINEZ-PASTOR ◽  
...  

1995 ◽  
Vol 09 (23) ◽  
pp. 3039-3051
Author(s):  
DILIP K. ROY ◽  
AJIT SINGH

The principles of operation of a double barrier resonant tunneling diode (DBRTD) giving rise to negative differential conductivity effect are first reviewed. Next, the physics of resonant tunneling based on (i) the time-independent conventional approach and (ii) the time-dependent quantum measurement approach, as applied to a DBRTD, is discussed. Expressions for the resonant tunneling current densities through the barriers are then derived on the ideas of quantum measurement. Through the well the current, however, flows by the conventional mechanism. The three current density magnitudes are found to be identical under resonant conditions. Finally, an expression for the resonant tunneling current density due to a group of incident electrons is derived.


Sign in / Sign up

Export Citation Format

Share Document