We report important factors affecting the dielectric properties of CaCu3Ti4O12 (CCTO)
polycrystalline ceramics prepared by the conventional solid-state ceramic process. The relative
dielectric constants (εr) up to several thousands (~ 3,000 at 1 kHz) were gradually increased with
increasing the sintered density of samples in the case that no exaggerated grain growth occurred. An
abrupt increase in εr values were, however, accompanied by the formation of abnormally grown large
grains, and thus with increasing the population of abnormally grown grains, which could be achieved
by a prolonged sintering at 1060°C, the εr values were remarkably increased from several thousands to
~105. Optimally processed CCTO sample exhibited a very high εr of ~ 90,000 at 1 kHz.