Improved Electrical Properties of BaTiO3 – coated CaCu3Ti4O12 Dielectrics

2012 ◽  
Vol 1454 ◽  
pp. 75-80
Author(s):  
Hui Eun Kim ◽  
Sung Yun Lee ◽  
Sang-Im Yoo
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Leakage Current ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Order Of Magnitude ◽  
Ccto Sample ◽  
State Mixing ◽  
Large Improvement

ABSTRACTWe report a significant improvement in the electrical properties of CaCu3Ti4O12 (CCTO) dielectrics by the BaTiO3 (BTO) additive. The addition of BTO to CCTO was performed using two different methods of a solid-state mixing and a sol-gel coating. Compared with pure CCTO ceramics (εr ∼ 52,000 and tanδ ∼ 0.38 at 100 kHz), BTO-added CCTO samples commonly showed a large improvement in the dielectric loss property although their dielectric constants were depressed around one order of magnitude; εr ∼ 5900 and tanδ ∼0.05 for 5 mol% BTO-coated CCTO sample and εr ∼ 4,075 and tanδ ∼ 0.02 for 5 mol% BTO-mixed CCTO sample. In addition, BTO-coated CCTO samples showed relatively lower leakage current than those of BTO-mixed CCTO samples, implying that the sol-gel coating is more effective for improving the electrical properties of CCTO.

Impact of Backend Processing on Integrated Ferroelectric Capacitor Characteristics

1993 ◽  
Vol 310 ◽  
Author(s):  
P.D. Maniar ◽  
R. Moazzami ◽  
R.E. Jones ◽  
A.C. Campbell ◽  
C.J. Mogab
Keyword(s):  
Leakage Current ◽  
Sol Gel ◽  
Low Pressure ◽  
Cmos Process ◽  
Ferroelectric Capacitor ◽  
Standard Cmos Process ◽  
Order Of Magnitude ◽  
Pressure Hydrogen

AbstractIntegration of a ferroelectric capacitor module in a standard CMOS process subjects the ferroelectric to various ambients during backend processing, some of which can render the ferroelectric essentially non-operational for NVRAM applications. Post-crystallization processing of sol-gel deposited integrated ferroelectric PZT capacitors in the presence of hydrogen-containing, reducing ambients is observed to degrade the nonvolatile polarization. Low-pressure hydrogen anneals at temperatures as low as 200°C substantially degrade the nonvolatile polarization while the DRAM polarization remains roughly constant. Leakage current drops by one order of magnitude and fatigue is accelerated. A ferroelectric capacitor module can be integrated with minimal degradation with careful modifications in the backend processing.

scholarly journals Nanocrystalline Antiferromagnetic High-κ Dielectric Sr2NiMO6 (M = Te, W) with Double Perovskite Structure Type

Molecules ◽  
2020 ◽  
Vol 25 (17) ◽  
pp. 3996
Author(s):  
Jelena Bijelić ◽  
Dalibor Tatar ◽  
Sugato Hajra ◽  
Manisha Sahu ◽  
Sang Jae Kim ◽  
...  
Keyword(s):  
Dielectric Loss ◽  
Sol Gel ◽  
Double Perovskite ◽  
Structure Type ◽  
Nyquist Plot ◽  
Dielectric Constants ◽  
Nanocrystalline Powders ◽  
Double Perovskites ◽  
Magnetic Studies ◽  
Magnetic Ground State

Double perovskites have been extensively studied in materials chemistry due to their excellent properties and novel features attributed to the coexistence of ferro/ferri/antiferro-magnetic ground state and semiconductor band gap within the same material. Double perovskites with Sr2NiMO6 (M = Te, W) structure type have been synthesized using simple, non-toxic and costless aqueous citrate sol-gel route. The reaction yielded phase-pure nanocrystalline powders of two compounds: Sr2NiWO6 (SNWO) and Sr2NiTeO6 (SNTO). According to the Rietveld refinement of powder X-ray diffraction data at room temperature, Sr2NiWO6 is tetragonal (I4/m) and Sr2NiTeO6 is monoclinic (C12/m1), with average crystallite sizes of 49 and 77 nm, respectively. Structural studies have been additionally performed by Raman spectroscopy revealing optical phonons typical for vibrations of Te6+/W6+O6 octahedra. Both SNTO and SNWO possess high values of dielectric constants (341 and 308, respectively) with low dielectric loss (0.06 for SNWO) at a frequency of 1 kHz. These values decrease exponentially with the increase of frequency to 1000 kHz, with the dielectric constant being around 260 for both compounds and dielectric loss being 0.01 for SNWO and 0.04 for SNTO. The Nyquist plot for both samples confirms the non-Debye type of relaxation behavior and the dominance of shorter-range movement of charge carriers. Magnetic studies of both compounds revealed antiferromagnetic behavior, with Néel temperature (TN) being 57 K for SNWO and 35 K for SNTO.

Effect of Technological Parameters on the Microstructure and Electrical Properties of ZnO Varistors

2013 ◽  
Vol 820 ◽  
pp. 208-211
Author(s):  
Li Li ◽  
Qi Bin Liu
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Leakage Current ◽  
Sintering Temperature ◽  
Voltage Gradient ◽  
Technological Parameters ◽  
Reaction Route ◽  
Conventional Solid State Reaction ◽  
Zno Varistors ◽  
Solid State Reaction Route

To improve voltage-gradient and to reduce the sintering temperature of ZnO varistors, high voltage-gradient ZnO varistors were synthesized with a conventional solid state reaction route. By means of SEM and DC parameter instrument for varistor, the influence of different technological parameters on microstructure, voltage-gradient and leakage current of ZnO varistors was investigated. The experimental results show that by using the process that presintering the additives at 850°C, the density is improved, the voltage-gradient is increased, and the leakage current is decreased. The optimum voltage-gradient and leakage current are 371V/mm and 3μA, respectively.

Preparation and Characterization of (Sr1−xTix)O3 and (Ba1−xSrx)TiO3 Thin Films using ECR Plasma Assisted MOCVD

1996 ◽  
Vol 433 ◽  
Author(s):  
Kwangsoo No ◽  
Joon Sung Lee ◽  
Han Wook Song ◽  
Won Jong Lee ◽  
Byoung Gon Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Breakdown Field ◽  
Carrier Gas ◽  
Ecr Plasma

AbstractBa(TMHD)2, Sr(TMHD)2 and Ti-isopropoxide were used to fabricate the (SrxTi1 x)O3 and (Ba1 x Srx)TiO3 thin films. The decomposition and degradation characteristics of Ba(TMHD)2 and Sr(TMHD)2 with storage time were analyzed using a differential scanning calorimeter (DSC). The thin films were fabricated on Si(p-type 100) and Pt/SiO2/Si substrates with Ar carrier gas using ECR plasma (or without ECR plasma) assisted MOCVD. Experimental results showed that the ECR oxygen plasma increased the deposition rate, the ratio of Sr/Ti, the dielectric constant and the leakage current density of the film. The dependency of the crystallinity and the electrical properties on the Sr/Ti ratio of films were investigated. However, almost of the films deposited with Ar carrier gas had slightly high dielectric loss and high leakage current density and showed non-uniform compositional depth profiles. NH3 gas was also used to decrease the degradation of the MO-sources. Mass spectra in-situ monitoring of source vapors in ECR-PAMOCVD system were obtained. By introducing NH3 as a carrier gas, a significant improvement was achieved in the volatility and the thermal stability of the precursors, and the vaporization temperatures of the precursors were reduced compared to Ar carrier gas. The uniform compositional depth profile, less hydrogen and carbon content and the good electrical properties of (SrxTi1−x)O3 thin films were obtained with NH3 carrier gas. The (Ba1−xSrx)TiO3 thin film were fabricated to have very fine and uniform microstructure, the dielectric constant of 456, the dielectric loss of 0.0128, the leakage current density of 5.01 × 10−8A/cm2 at 1V and the breakdown field of 3.65MV/cm.

Structural and electrical properties of lithium cobalt nanoferrites prepared by sol–gel method

2015 ◽  
Vol 29 (01) ◽  
pp. 1450255
Author(s):  
Victory Maisnam ◽  
Mamata Maisnam ◽  
Sumitra Phanjoubam
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Ac Conductivity ◽  
Sol Gel ◽  
Interfacial Polarization ◽  
Frequency Variation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Lithium Cobalt

Lithium cobalt nanoferrites having the compositional formula Li 0.5-x/2 Co x Fe 2.5-x/2 O 4 with x varying from 0.00 to 0.12 in steps of 0.03 were prepared by the chemical sol–gel method. Samples were heated at two different temperatures namely 300°C and 500°C for 4 h. Structural characterization of the samples was done using X-ray diffraction (XRD) technique and confirmed the formation of single phase with spinel structure in all the samples. From the XRD data, the lattice parameter was calculated and found to range from 82.87–83.35 nm while the crystallite size was found to be in the range 17–34 nm. Microstructural studies were carried out using the Scanning Electron Microscopy and revealed the microstructures with grain size ranging from 35–70 nm. Electrical properties like dielectric constant, dielectric loss and AC conductivity for these nanoferrites were investigated. The frequency variation of room temperature dielectric constant, dielectric loss and AC conductivity were studied in the frequency range 100 Hz–1 MHz, and a dispersive behavior was observed, which has been attributed to the Maxwell–Wagner type of interfacial polarization.

Enhancement of the Electrical Properties of BaTiO3 Films on GaAs Using Double Layer Structures

1994 ◽  
Vol 361 ◽  
Author(s):  
L.H. Chang ◽  
W.A. Anderson
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Charge Density ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Double Layer ◽  
Current Density ◽  
Dielectric Constants ◽  
Oxide Charge

ABSTRACTFerroelectric BaTiO3 thin films have been directly deposited on n-GaAs with carrier concentration of 5.3–8.2×1017/cm2. The BaTiO3 thin films with a thickness in the range of 80–120 nm were prepared by RF magnetron sputtering with a substrate temperature of 300°C. The as-deposited BaTiO3 films appeared to be amorphous with relative dielectric constants of around 15 and gave flat capacitance-voltage (C-V) curves, indicating poor interface properties and very high oxide charge density. After rapid thermal annealing (RTA) at 800°C for 60 sec, the relative dielectric constant of the BaTiO3 film increased to 82 and a sharp C-V curve was observed with oxide charge density of about 7×1012/cm2. However, the leakage current density increased from 4×10'11 A/cm2 for as-deposited BaTiO3 to 2×105 A/cm2 for RTA(800°C)-BaTiO3 at a field of 4×105 V/cm. By taking advantage of the best properties from both as-deposited amorphous BaTiO3 films (low leakage current density) and RTA(800°C)-BaTiO3 (high dielectric constant) the double layer structure was designed to enhance the electrical properties of the BaTiO3 films on GaAs. The most promising results in regards to the dielectric property and leakage current density are 76.5 and 9.7×109 A/cm2, respectively, for the double layer RTA(500°C)-BaTiO3 on RTA(800°C)-BaTiO3 structures.

ZrO2 Layer Thickness Dependent Electrical and Dielectric Properties of BST/ZrO2/BST Multilayer Thin Films

2011 ◽  
Vol 1368 ◽  
Author(s):  
Santosh K. Sahoo ◽  
D. Misra ◽  
D. C. Agrawal ◽  
Y. N. Mohapatra
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Layer Thickness ◽  
Leakage Current ◽  
Loss Tangent ◽  
Multilayer Structure ◽  
Multilayer Thin Films ◽  
High Dielectric

ABSTRACTRecently, high K materials play an important role in microelectronic devices such as capacitors, memory devices, and microwave devices. Now a days ferroelectric barium strontium titanate [BaxSr1-xTiO3, (BST)] thin film is being actively investigated for applications in dynamic random access memories (DRAM), field effect transistor (FET), and tunable devices because of its properties such as high dielectric constant, low leakage current, low dielectric loss, and high dielectric breakdown strength. Several approaches have been used to optimize the dielectric and electrical properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in dielectric constant, loss tangent, and leakage current in the multilayer thin films. Also it is shown that the properties of multilayer structure are found to depend strongly on the sublayer thicknesses. In this work the effect of ZrO2 layer thickness on the dielectric, ferroelectric as well as electrical properties of BST/ZrO2/BST multilayer structure is studied. The multilayer Ba0.8Sr0.2TiO3/ZrO2/Ba0.8Sr0.2TiO3 film is deposited by a sol-gel process on the platinized Si substrate. The thickness of the middle ZrO2 layer is varied while keeping the top and bottom BST layer thickness as fixed. It is observed that the dielectric constant, dielectric loss tangent, and leakage current of the multilayer films reduce with the increase of ZrO2 layer thickness and hence suitable for memory device applications. The ferroelectric properties of the multilayer film also decrease with the ZrO2 layer thickness.

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