Creation of complex composites from Metal-Organic Frameworks with pure metal nanoparticles under electronic irradiation

Metal-organic frameworks (MOFs) are unique materials with high porosity and flexibility utilized widely in chemistry and physics. However, they could be used as initial materials for creation new types of composites with nanoparticles. The creation of NPs inside MOFs crystals is related with different types of outer stimuli (temperature, light, and electron irradiation). Here we report about a new approach of the creation complex composites from MOFs’ crystals using the electron irradiation of the transmission electron microscope (TEM) as a highly precise method for the growing of different types of Ni and Cu nanoparticles and discuss about the dynamical process of NPs growth using the classical kinetic theory.

Electronic irradiation of TlInSxSe2−x (x = 1): Morphology, structure and raman scattering

It is shown that the replacement of a part of sulfur atoms with selenium atoms in a TlInS2 single crystal stimulates the formation of a single-phase state with a monoclinic structure (space group [Formula: see text]/[Formula: see text] in TlInS[Formula: see text]Se[Formula: see text] ([Formula: see text]). Irradiation with 2 MeV electrons and a fluence of [Formula: see text] electron/cm2 of powder TlInS[Formula: see text]Se[Formula: see text] ([Formula: see text]) leads to an increase in the crystallite size from 56.5 nm to 65 nm, which is most likely associated with a decrease in the interface. The difference between the surface morphology of the synthesized TlInS[Formula: see text]Se[Formula: see text] ([Formula: see text]) single crystal and the surface morphology of the TlInS2 single crystal is established, which consists in a decrease in the height and width of the roughness in TlInS[Formula: see text]Se[Formula: see text] ([Formula: see text]). Irradiation of a TlInS[Formula: see text]Se[Formula: see text] ([Formula: see text]) single crystal with electrons with a fluence of [Formula: see text] electron/cm2 does not lead to a change in the height of the tubercle on its surface, and the average value of its width increases more than ten-fold. The identity of the peaks in the Raman spectra of the TlInS[Formula: see text]Se[Formula: see text] ([Formula: see text]) single crystal before and after its irradiation with electrons with an energy of 2 MeV and upto a fluence of [Formula: see text] electron/cm2, along with the absence of a shift of the peaks, indicates the radiation resistance of the TlInS[Formula: see text]Se[Formula: see text] ([Formula: see text]) single crystal.

Luminescent analysis etching processes of sapphire with gold nanocrystals in electronbeam

The presented work considers the possibility of studying the processes of radiation-induced ki-netics restructuring of the sapphire surface with gold nanocrystals using the time dependence intensity of cathodoluminescence spectra. It was shown that the main of color centers in the UV region of the spectrum of cathodoluminescence of sapphire are F+centers, and the F-band is suppressed. The study of the time dependence of the intensity of F+centers confirms the ab-sence of the surface melting stage of sapphire during irradiation with a beam of electrons with an accelerating voltage of 50 keV. The small line widening value Cr3+ corresponds to minor temperature devi-ations on the sapphire surface during electronic irradiation. A qualitative model describing etching of sapphire sur-face with gold nanocrystals during electron action is proposed. The model considered is based on radiation-induced Auger decay of sapphire and formation of intermetallic phases in the process of the exothermic reaction in the Au-Al sys-tem