DFT STUDY OF METHYL (CH3) AND HYDROXYL (OH) ADSORPTION ON A GOLD (001) SURFACE

We used the DACAPO code with the GGA-PW91 approximation to study the adsorption of methyl (CH3) and hydroxyl (OH) for four- and five-layer gold (Au) (001) slabs. We have determined for each species the best binding site, adsorption energy, the change in the work function, surface energy, surface dipole moment, geometrical parameters and projected density of states (PDOS). We performed spin-unpolarized and spin-polarized DFT calculations for free and adsorbed CH3 and OH species. The most important point is that the spin polarization diminishes the adsorption energies but does not change the geometrical parameters. For the CH3 species, only the top site was found to be stable for different coverages. We found that during the optimization phase, the hollow and bridge sites were found to be unstable. In both cases the CH3 species moves toward the top site. We observe that the adsorption energy decreases when increasing the coverage. However, the OH species was stable in all investigated sites (top, bridge and hollow). We notice that the adsorption energy is dependent on the number of slab layers and the bridge is the best site in adsorption energy. The analysis of the calculated O PDOS of OH radical shows a mixing between the O orbitals and the Au bands.

Автоэмиссия многоострийных катодных матриц на кремнии p-типа в сильных импульсных электрических полях

In this paper, we experimentally studied the dynamic properties of autoelectron emission in strong pulsed electric fields of microsecond duration for multipointed cathode arrays based on surface-modified silicon crystals of the hole type. A decrease in the thresholds for the autoemission onset with an increase in the pulse duration is shown to increase the transparency of potential barriers due to an increase in the electron energy. Autoemission parameters are determined by surface dipole moments and embedded surface potentials that are formed during plasma etching of silicon in various chemically active media.

Modification of the p-GaP(001) work function by surface dipole bonds formed in sulfide solution

Sulfur treatment of p-GaP(001) surfaces increases the ionization energy and near-surface electric field due to a dipole layer consisting of gallium sulfates.