photoconductivity measurement
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In-situ photoconductivity measurement of imidazole in optical fiber break-junctions

2021 ◽  
Author(s):  
Zhikai Zhao ◽  
Chenyang Guo ◽  
Lifa Ni ◽  
Xueyan Zhao ◽  
Surong Zhang ◽  
...  
Keyword(s):  
Electron Transport ◽  
Optical Fiber ◽  
Transport Properties ◽  
Molecular Junctions ◽  
Break Junction ◽  
Break Junctions ◽  
Fiber Break ◽  
Electron Transport Properties ◽  
Photoconductivity Measurement

We develop a method based on the mechanically controllable break junction technique to investigate the electron transport properties of single molecular junctions upon fiber waveguided light. In our strategy, a...

Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement

2018 ◽  
Vol 5 (1) ◽  
pp. 2132-2138 ◽  
Author(s):  
Nisha Prakash ◽  
Gaurav Kumar ◽  
Arun Barvat ◽  
Kritika Anand ◽  
B. Choursia ◽  
...  
Keyword(s):  
Temperature Dependent ◽  
Photoconductivity Measurement ◽  
Trap Levels

First photoconductivity measurement following photoionization of rare-earth dopant in a dielectric powder

2007 ◽  
Vol 127 (1) ◽  
pp. 171-175 ◽  
Author(s):  
H. Loudyi ◽  
Y. Guyot ◽  
J.-C. Gâcon ◽  
C. Pédrini ◽  
M.-F. Joubert
Keyword(s):  
Rare Earth ◽  
Rare Earth Dopant ◽  
Photoconductivity Measurement

Study of Electronic Properties by Persistent Photoconductivity Measurement in GaxIn1-xNyAs1-yGrown by MOCVD

2005 ◽  
Vol 44 (4B) ◽  
pp. 2454-2457 ◽  
Author(s):  
S. H. Hsu ◽  
Y. K. Su ◽  
R. W. Chuang ◽  
S. J. Chang ◽  
W. C. Chen ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Persistent Photoconductivity ◽  
Photoconductivity Measurement

Photoconductivity measurement of polymers by x-ray absorption fine structure

1999 ◽  
Vol 85 (11) ◽  
pp. 7755-7758
Author(s):  
T. D. Hu ◽  
Y. N. Xie ◽  
T. Liu ◽  
X. Ju ◽  
K. Ibrahim ◽  
...  
Keyword(s):  
Fine Structure ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption ◽  
Photoconductivity Measurement

AC-photoconductivity measurement of C60 epitaxial film

1997 ◽  
Vol 239 (1-2) ◽  
pp. 32-34 ◽  
Author(s):  
T. Ohgami ◽  
Y. Shimada ◽  
H. Kubota ◽  
H. Tanaka ◽  
S. Matsuzaki ◽  
...  
Keyword(s):  
Epitaxial Film ◽  
Photoconductivity Measurement

Deep Levels in GaN Studied by Extrinsic Photoconductivity Measurement

1996 ◽  
Vol 449 ◽  
Author(s):  
Rong Zhang ◽  
Zhenchun Huang ◽  
Bo Guo ◽  
J. C. Chen ◽  
Li Yan ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Optical Absorption ◽  
Cross Section ◽  
High Resistance ◽  
Room Temperature ◽  
Deep Levels ◽  
Localized States ◽  
Absorption Cross ◽  
Gan Film ◽  
Photoconductivity Measurement

ABSTRACTModulation Extrinsic photoconductivity spectra between 1.44eV and 1.75eV of unintentionally n-doped high resistance GaN film grown by MOCVD are measured at room temperature by using wavelength adjustable Ti:Sapphire laser. We find that there are two major deep levels in the GaN material in the used photon energy range. The relaxation time of excess carriers controlled by those levels are in the order of 10−4sec. The concentration of localized states are determined as 1.8×108cm−3 and 2.5×109cm−3, respectively. A physical model is developed to explain the results and process the data. Using a new method we have determined the optical absorption cross section of deep levels are 1.5×10−17cm2 and 2.7×10−18cm2, respectively.

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