Use of Spectroscopy and Computer Simulation to the Study of Surfaces Modified by Ionic Implantation

Using X-ray Photoelectron Spectroscopy (XPS) and energy dispersion spectrometry, the phase and elemental compositions of the nanoscale surface layer of implants are studied. The method of determination of the optimal mode of nanoscale modification of the surfaces of metals and alloys by means of the ionic implantation is presented. The problem of processing the curved surfaces with mathematical calculations and a computer simulation is solved. The proposed technique is tested on synthesized implants. The sample hardness was taken as a criterion.

Computational Study of Damage Profiles and Energy Loss of Gallium Ion in Germanium Substrate

Computational calculation of energy loss and study of damage profiles during ionic implantation by gallium ions on germanium had been carried out. The required energies for doping of gallium ion on germanium, in order to obtain maximum damage at 600 Å, were calculated using SRIM; Stopping and Range of Ions in Matter. The ions when implanted independently on germanium causes the production of germanium recoils, vacancy-interstitial pairs, and phonons during the collision process. For 130 keV gallium ion, the energy used for ionization, phonon production and vacancies creation are 37.713 keV (29.01% of incident energy), 90.006 keV (64.29% of incident energy) and 8.71 keV (6.7% of incident energy) respectively. The amount of target displacement, replacement collisions and vacancies were also evaluated. Doping of gallium ions on germanium also reveals that the energy loss due to nuclear stopping was greater than electronic stopping.

Variation of I–V characteristics due to process parameters as base for modeling the component variability for LDD MOSFET devices

In this paper, we present the effect of process parameters variations on [Formula: see text]–[Formula: see text] characteristics of LDD MOSFETs through a simulation study, applying also to any submicron device. In particular, we examine the effect of variation of ionic implantation for different channel doping involved in MOSFET production. At last, we examine a linear [Formula: see text]–[Formula: see text] model to simulate more adequately the effects of variation of the process parameters as correction to the base model.

High technology to reduce hydrogen wear of work surfaces of friction

This paper reports the problems considered regarding the hydrogen wear decrease in steel parts operating in hydrogen medium and, in particular, in hydrocarbon liquids. The comparative researches are carried out with samples after thermal treatment, high-vacuum annealing and ionic implantation and also after a combination of these methods. The structure of samples surface layer is investigated after a combined working and the values of micro-hardness of layers formed are given. The investigation of surface quality changes is carried out. The results of comparative abrasion tests of samples are presented. It is defined that after a combined working samples wear decreased. There are shown data on the hydrogen concentration in a surface layer of samples and the analysis of surface properties for hydrogen concentration and hydrogen wear intensity is carried out.