Радиационная стойкость источника субтерагерцового излучения из гетеродина на генераторе на диоде Ганна и умножителя на полупроводниковой сверхрешетке

The radiation resistance to gamma irradiation of various dose levels (0.5 kGy, 2 kGy, 10 kGy) of a subterahertz radiation source from a heterodyne on a Gunn diode and a GaAs / AlAs semiconductor superlattice multiplier was estimated. A measuring chamber for studying the radiation resistance of Gunn diodes has been developed and manufactured. The dependence of the output power on the frequency of a sub-terahertz radiation source before and after irradiation was evaluated analytically.

Особенности импульсного нагрева излучением субтерагерцевого гиротрона при получении нанопорошков оксидов металлов

The paper describes the features of the metal oxide nanopowder obtaining by an evaporation-condensation method with pulsed heating of the material by focused subterahertz radiation. It has been experimentally shown that optimal conditions for the rapid evaporation of a substance are achieved at the highest possible pulse power and the lowest possible duty cycle at a fixed average power. Under these conditions, it is possible to realize the heating and evaporation of a substance in a focused radiation beam in a relatively short time, while the adjacent layers of the substance maintain a relatively low thermal conductivity. A linear increase in the evaporation rate with a decrease in the duty cycle of heating pulses was demonstrated, the increase reached 5 times relative to the continuous heating mode.