Correction: Poljak et al. Metallization-Induced Quantum Limits of Contact Resistance in Graphene Nanoribbons with One-Dimensional Contacts. Materials 2021, 14, 3670

The authors regret that the results presented in Figure 3c,d and Figure 6c,d in our published paper [...]

Magnetron Sputtering Construction of Nano-Al Metallized Wood and Its Functional Research

The magnetron sputtering method was used to deposit nano-Al film on the wood surface of Pinus sylvestris L. var. mongholica Litv., and the material structure, electrical conductivity, mechanical properties and wetting properties were tested and characterized. When the sputtering time was 60 min, the average cross-grain sheet resistance of metallized wood was 695.9 mΩ, and the average along-grain sheet resistance was 227.2 mΩ. Load displacement decreased by more than 88%,elastic modulus increased by 49.2 times, hardness increased by 46 times andsurface hydrophobic angle was close to 130°. The grain size of the Al film on the wood surface was presented as nanoparticles, and the arrangement was uniform and dense. The results indicate that without any burden on the environment, the use of magnetron sputtering can quickly and efficiently achieve Al metallization on wood surfaces, so that the wood surface can obtain conductivity and hydrophobic properties. The elastic modulus and hardness of the wood surface were improved, the mechanical properties of the wood were effectively improved and the functional improvement of the wood was realized. This study provides a feasible method and basis for the study of the simple, efficient and pollution-free modification of wood.

Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting

An anomalous aluminum-mediated material transport process was investigated in sets of Ge-on-Si photodiodes with broadband optoelectrical characteristics measured at wavelengths from 255 nm to 1550 nm. The diodes had “PureGaB” anode regions fabricated by depositing a Ga wetting layer capped with an 11-nm-thick B-layer on 0.5 µm-thick Ge islands grown on Si. The Al metallization was able to reach the Ge-Si interface through ~ 0.1-µm-wide holes inadvertently etched along the perimeter of the Ge-islands, and then traveled along the Ge-Si interface, displacing and recrystallizing Ge and Si. The rest of the Ge surface was protected from the Al contact metallization by the B-layer. For diodes that had received the standard 400°C Al alloying step, the responsivity was near-theoretical at 406 nm and 670 nm, but, at 1310 nm and 1550 nm, the proximity of Ge-Si interfacial defects caused significant attenuation. Extra annealing at 400°C or 500°C enhanced the formation of Si pits that were filled with modified Ge crystals alloyed with Si and p-doped with Al. All these diodes maintained low dark currents, below 50 µA/cm2 at 2 V reverse bias, but the responsivity was degraded, particularly for the long wavelengths. On the other hand, neither responsivity nor degradation of current–voltage (I–V) characteristics was observed for prolonged exposure to normal operating temperatures up to 100°C. Since the direct Al contacting of the Ge sidewalls does not degrade the dark current, for large diodes it could be a low-cost method of obtaining low contact resistance to an anode with p-type sidewall passivation and high fill-factor.