A Monte Carlo Model for Analyzing the Effects on Radiometric Temperature Measurement in Rapid Thermal Processor

The radiometric temperature measurement is often applied to the in-situ and real-time monitor for rapid thermal processing of semiconductor wafer. To obtain good accuracy, the effective emissivity of measured spot is determined simultaneously as well. However, the effective emissivity strongly depends on the characteristics of wafer, processing chamber, and sensors. This paper presents a Monte Carlo model with bi-directional reflection distribution function to estimate the related effective emissivity of wafer. The ends of radiation thermometer considered are located either on the inner surface of processing chamber or at the proximity of wafer. The results are checked and compared with those of the previous work. Finally the primary effects on radiometric temperature measurement are analyzed and discussed.

Meeting RTP Temperature Accuracy Requirements: Measurement and Calibrations at Nist

ABSTRACTAlthough radiometric temperature measurement in rapid thermal processing (RTP) tools has substantially improved in terms of repeatability and uniformity, it still remains a technical challenge. The 1999 requirements of 180 nm line width technology in the 1997 National Technology Roadmap for Semiconductors (NTRS) imply an uncertainty of ± 2 °C in temperature measurement, which will continue the challenge in temperature measurement. In this paper we will discuss the NIST absolute radiometric temperature calibration, measurements, and uncertainty analysis.